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120NQ045IRN/a19avai45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package


120NQ045 ,45V 120A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
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120NQ045
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
PD-2.224 rev. C 09/98
International
GiR Rectifier 120NQ...(R) SERIES
SCHOTTKY RECTIFIER 120 Amp
Major Ratings and Characteristics Description/Features
The 120NQ...(R) high currentSchottky rectifier module series
Characteristics 120NQ...(R) Units has been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barriertechnology allows for
reliable operation up to 150° C junction temperature. Typical
applications are in switching powersupplies, converters, free-
wheeling diodes, and reverse battery protection.
VRRM range 35 to 45 V . 150° C T J operation
. Unique high power, Half-Pak module
IHAV) Rectangular 120 A
waveform
|FSM @tp=5pssine 29,000 A . Replaces two parallel DO-5's
E . - '
V): @120Apk,TJ=125°C 0.52 V . esnerte mohnt and lower profile than DO 5 s .
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
TJ range -55to150 C . Very low forward voltage drop
. Highfrequencyoperation
. Guard ring for enhanced ruggedness and long term
reliability
30. "40_(1A97)
114.20 won 29. 90 (l. 177) _i9i'i"ii')i,,s,,,.,,c, 120NQ045
i 19. 69 '69(_th775 775) Lug TerminaIAnode
18.42 (0. 725)
4.11 (0.162) I
3.86 (0-152) IA L Base Cathode
12. 83 2a3(ih505 505)D
A. 4.11 '"'"-h162)i,
12. 57 (0. 495)D
3.86 (O. 152)D
120NQO45R
19.18 (0.755) .
- *1832 (0.745) Lug Terminal Cathode
13.97 (0.550) I + 15.11 (0.595) Base Anode
13.72 (0.540) . ... " m 14.61 (0.575)
4 I I l
2 54 0.100 Outline D-67 HALF PAK Module
39m2(l560) 2di4(_0A00) Dimensions in millimeters and (inches)
38.61 (1.520) 2.29 (0.090)
1
120NQ...(R) Series
International
PD-2.224 rev. C 09/98 IEER Rectifier
Voltage Ratings
Part number 120NQ035(R) 120NQ040(R) 120NQ045(R)
VR Max. DC Reverse Voltage (V)
. 35 40 45
VR’WM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 120NQ Units Conditions
IHAV) Max.AverageForwardCurrent 120 A 50%dutycycle@Tc=106°C,rectangularwaveform
*SeeFig.5
IFSM Max.PeakOneCycleNon-Repetitive 29,000 5ps Sineor3ps Rect.pulse .Follt.owing.yyrate.d
A load condition and
SurgeCurrent*SeeFig.7 1550 10msSineor6ms Rect. pulse with ratedVRRMapplied
EAS Non-RepetitiveAvalancheEnergy 81 mJ TJ=25°C, IAS= 12Amps,L= 1.12 mH
IAR RepetitiveAvalancheCurrent 12 A Currentdecayinglinearlytozeroin1psec
Frequency limited byT, max.VA=1.5xVR typical
Electrical Specifications
Parameters 120NQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.57 V @ 120A T - 25 ''C
* See Fig. 1 0.73 v @ 240A J
0.52 V @120A T, =125°C
0.69 V @ 240A
lo, Max. Reverse Leakage Current(1) 10 mA T, = 25 "C
. VR = rated VR
*See Fig.2 500 mA To-- 125°C
VFUO) Threshold Voltage 0.32 V T J = T J max.
rl Forward Slope Resistance 1.37 mn
c, Max. Junction Capacitance 5200 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 7.0 nH From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate ofChange 10,000 V/ us
(RatedVR)
. .-. . 1)PulseNdth 300 ,D Cl 2"/
Thermal-Mechanical Specifications ( ) ulse I < ps uty Wye < tt
Parameters 120NQ Units Conditions
T J Max.JunctionTemperatureRange -55to150 "C
Tstg Max.StorageTemperatureRange -55t0150 "C
RthJc Max.ThermalResistanceJunction 0.40 "Ch/V DCoperation *See Fig.4
toCase
Recs TypicaIThermalResistance,Caseto 0.15 "CAN Mountingsurface,smoothandgreased
Heatsink
wt ApproximateWeight 25.6(0.9) g(oz.)
T MountingTorque Min. 17(15) Non-Iubricatedthreads
Max. 29(25) Kg-cm
TerminalTorque Min. 23(20) (Ibf-in)
Max. 46(40)
Case Style HALF PAK Module
2
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