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10TQ035IRN/a3000avai35V 10A Schottky Discrete Diode in a TO-220AC package
10TQ045 |10TQ045IR N/a94avai45V 10A Schottky Discrete Diode in a TO-220AC package
10TQ045SIRN/a375avai45V 10A Schottky Discrete Diode in a D2-Pak package


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10TQ035-10TQ045 -10TQ045S
35V 10A Schottky Discrete Diode in a TO-220AC package
International
ISER Rectifier
Bulletin PD-20057 01/01
10TQ...
1OTQ...S
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
10 Amp
|F(AV) = 10Amp
VR = 35 to 45V
Description! Features
. . . The 10TO.. Schottky rectifier series has been optimized for
Characteristics 10TQ Units low reverse leakage at high temperature. The proprietary
barriertechnology allows for reliable operation up to 175° C
I Rectangular 10 A junction temperature. Typical applications are in switching
F(AV) . . .
power supplies, converters, free-wheeling diodes, and re-
waveform verse battery protection.
VRRM 35 to 45 V . 175° C T: operation
. . High purity, high temperature epoxy encapsulation for
IFSM @tp= 5ps snne 1050 A enhanced mechanical strength and moisture resistance
V 10A k T - 125°C 0 49 V . Low forward voltage drop
F @ p , J- . . High frequency operation
TJ range -55to175 "C . anrgifing for enhanced ruggedness and long term
reliability
Case Styles
10TQ... 10TQ... S
TO-220 D2PAK

International
10TQ... Series
Bulletin PD-20057 01/01 IEER Rectifier
Voltage Ratings
Part number 10TQO35 10TQO40 10TQO45
VR Max. DC Reverse Voltage (V)
V M . 35 40 45
RWM ax. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 10TQ Units Conditions
IHAV) Max.Average Forward Current 10 A 50%dutycycle@TC=151°C.rectangularwaveform
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive 1050 5ps Sine or3ps Rect. pulse Following _any rated
. A . load condition and
Surge Current * See Fig. 7 280 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non-RepetitiveAvalancheEnergy 13 mJ TJ=25°C, IAS=2Amps,L=6.5mH
|AR RepetitiveAvalancheCurrent 2 A Currentdecayinglinearlytozeroin1 usec
Frequencylimited byT, max.VA=1.5xVR typical
Electrical Specifications
Parameters 10TQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.57 V @ 10A T, = 25 'C
* See Fig. 1 0.67 V @ 20A
0.49 V @10A TJ=125°C
0.61 V @ 20A
IRM Max. Reverse Leakage Current (1) 2 mA T J = 25 "C VR = rated VR
*SeeFig.2 15 mA TJ=125°C
c, Max. Junction Capacitance 900 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10,000 V/ us
(Rated VR)
(1) Pulse Ndth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10TQ Units Conditions
T J Max. Junction Temperature Range -55to 175 "C
Tstg Max. StorageTemperature Range -55to175 "C
RthJC Max.ThermalResistanceJunction 2.0 "C/W DC operation *See Fig.4
to Case
Rmcs Typical Thermal Resistance, Caseto 0.50 "C/W Mounting surface , smooth and greased
Heatsink
wt ApproximateWeight 2(0.07) g (02.)
T Mounting Torque Min. 6(5) Kg-cm
Max. 12(10) (lbf-in)

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