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10MQ060NPBF-10MQ060NTRPBF
SCHOTTKY RECTIFIER
International
1:212 Rectifier
Bulletin PD-20519 rev.L 07/04
10MQ060N
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
2.1 Amp
|F(AV) = 2.1Amp
VR = 60V
Description! Features
. . . The 10MQ060N surface mount Schottky rectifier has been
Characteristics Value Units designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
IF DC 2.1 A lies, switching power supplies, converters, freyteeling
diodes, battery charging, and reverse battery protection.
VRRM 60 v . Small foot print, surface mountable
. Low forward voltage drop
|FSM @tp= 5pssine 40 A . High frequency operation
. Gy.alr.ing for enhanced ruggedness and long term
VF @1.5Apk, TJ=125°C 0.63 V reliability
T: range - 55 to 150 °C
Case Styles
10MQ060N
Cathode Anode
1
10MQ060N International
Bulletin PD-20519 rev.L 07/04 IEER Rectifier
Voltage Ratings
Part number 10MQ060N
VR Max. DC Reverse Voltage (V)
a,, Max. Working Peak Reverse Voltage (V) 60
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IHAV) Max. Average Forward Current 1.5 A 50% duty cycle@TL= 120°C, rectangularwave form.
* See Fig. 4 On PC board 9mm2 island(.013mmthick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 40 5ps Sine or 3ps Rect. pulse Following any rated
A load condition and
Surge Current * See Fig. 6 10 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 2.0 mJ Tu=25 °C, |AS= 1A, L=4mH
|AR Repetitive Avalanche Current 1.0 A
Electrical Specifications
Parameters 10MQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.63 V @ IA TJ = 25 "C
* See Fig. 1 0.71 V @ 1.5A
0.57 V © 1A T, =125 'C
0.63 V @ 1.5A
IRS, Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C v,, = rated VR
* See Fig. 2 7.5 mA Tu = 125 ''C
VHTO) Threshold Voltage 0.45 V T J = T J max.
r, Forward Slope Resistance 86.8 mg
C T Typical Junction Capacitance 31 pF VR = ION/oc, TJ = 25°C, test signal = 1Mhz
L s Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
T, Max. Junction Temperature Range (*) -55 to 150 ''C
stg Max. Storage Temperature Range - 55 to 150 ''C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IRI H
C)dPtot < 1
. ' thermal runaway condition for a diode on its own heatsink
dT] Rth(j-a)
2
