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10ETS08FPIRN/a135avai800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package


10ETS08FP ,800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)packageApplications Single-phase Bridge Three-phase Bridge UnitsCapacitive input filter T = 55°C, T = 125° ..
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10ETS08FP
800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
Preliminary Data Sheet 12142 rev. A 03/99
International SAFEIR Series
Ti,Ciit, Rectifier 10ETS..FP
INPUT RECTIFIER DIODE
TO-220 FULLPAK VF < 1.1V@10A
IFSM = 200A
vRRM 800 to 1600V
Description/Features
The 10ETS..FP rectifier SAFEIR series has
been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150°C junction temperature.
Typical applications are in input rectification
and these products are designed to be used
with International Rectifier Switches and
Output Rectifiers which are available in
identical package outlines. Fully isolated
package (VINS = 2500 VRMS).
UL E78996 approved 91)
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
Capacitive inputfilterTA= 55°C, T: = 125°C 12.0 16.0 A
common heatsinkof1°ClW
Major Ratings and Characteristics Package Outline
Characteristics 10ETS..FP Units
IHAV) Sinusoidalwaveform 10 A
vRRM 800to 1600 v
IFSM 200 A
VF @10A,TJ=25°C 1.1 V
T J -40to150 °c TO-220AC FULLPAK
1
10ETS..FP SAFEIR Series
Preliminary Data Sheet 12142 rev. A 03/99
International
IEER Rectifier
Voltage Ratings
VRRM , maximum VRSM, maximum non repetitive |RRM
Part Number peak reverse voltage peak reverse voltage 150°C
V V mA
10ETS08FP 800 900 0.5
10ETS12FP 1200 1300
10ETS16FP 1600 1700
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters 10ETS..FP Units Conditions
IHAV) Max.AverageForwardCurrent 10 A @TC=105°C,180°conductionhalfsinewave
|FSM Max.PeakOneCycIeNon-Repetitive 170 A 1OmsSinepulse,ratedVRRMapplied
SurgeCurrent 200 10msSine pulse,novoltagereapplied
Ft Max. |2tforfusing 130 A25 10ms Sine pulse, rated vRRM applied
145 10ms Sine pulse, no voltage reapplied
/% Max. i2/ttortusing 1450 Ales t=0.1to10ms,novoltagereapplied
Electrical Specifications
Parameters 10ETS..FP Units Conditions
VFM Max. Forward Voltage Drop 1.1 V @ 10A,TJ=25°C
rt Forward slope resistance 20 mn
T J = 150°C
VF(T0)Threshold voltage 0.82 V
|RM Max. Reverse Leakage Current 0.05 Tv-- 25''C
mA VR = rated VRRM
0.50 T J = 150 "C
Thermal-Mechanical Specifications
Parameters 10ETS..FP Units Conditions
TJ Max. Junction Temperature Range -40to150 (
Tstg Max. Storage Temperature Range -40to150 °C
Rtruc Max. Thermal Resistance Junction 2.5 °CNV DC operation
to Case
R”1JA Max. Thermal Resistance Junction 62 "Ch/V
to Ambient
Rthcs Typical Thermal Resistance, Case to 0.5 "CAN Mounting surface , smooth and greased
Heatsink
M Approximate Weight 2(0.07) g(oz.)
T Mounting Torque Min. 6(5) Kg-cm
Max. 12(10) (Ibf-in)
Case Style TO-220FULLPAK (94N0)
2
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