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10BQ100TR
100V 1A Schottky Discrete Diode in a SMB package
Bulletin
International
1:212 Rectifier
SCHOTTKY RECTIFIER
PD-2.437 rev.G 02/04
Major Ratings and Characteristics Description! Features
. . . The 1OBQ100 surface-mount Schottky rectifier has been
Characteristics 1 OBQ100 Units designed for applications requiring low fon/vard drop and very
small foot prints on PC boards. Typical applications are in disk
IF(AV) Rectangularwaveform 1.0 A drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
VRRM 100 V . Small foot print, surface mountable
. Low forward voltage drop
IFSM @ tp = 5 US sine 780 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.0Apk, TJ=125°C 0.62 V reliability
TJ range -55 to 175 °C
Device Marking: IRIJ CATHODE ANODE
2.15 (.085):I:[ j 3.80 (.150) f Ci) Ci)
1.80 (.071) 3.30 (.130) —
4.10 (.161)
Dimensions in millimeters and (inches)
4.70 (.185) Ci) POLARITY Ci) PART NUMBER
2.5 TYP. AD
fifi/—\ (.098 TYP.) S0LDERING P
2.40 (.094) I
1.90 (.075) " 71 D
1 30 ( 051) l 020 (.012) J; 1
. _ 1 ; 0.15 (.006) 2.0 TYP. -ol k-
0.76 (.030) 5.60 (.220) (.079 TYP.) 4 2 165
5.00 (.197) . (.
4.0 (.157)
Outline SMB
For recommended footprint and soldering techniques refer to application note #AN-994
1OBQ100 International
Bulletin PD-2.497 rev.G 02/04 IEER Rectifier
Voltage Ratings
Part number 1OBQ100
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 10BQ Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cycle@TL= 152 ''C, rectangular waveform
IFSM Max. Peak One Cycle Non-Repetitive 780 A 5ps Sine or3ps Rect. pulse Following any rated
load condition and
Surge Current 38 10ms Sine or6ms Rect. pulse with rated VRRMapplied
EAS Non-Repetitive Avalanche Energy 1.0 mJ TJ=25°C, IAS=015A, L=8mH
I AR Repetitive Avalanche Current 0.5 A Current decayinglinearlytozeroin1 psec
Frequencylimited tur, max.Va=1.5xVrtypical
Electrical Specifications
Parameters 10BQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.78 V @ IA TJ = 25 °C
* See Fig. 1 0.89 V @ 2A
0.62 V @ IA Tv-- 125''C
0.72 V © 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA Tu = 25 "C
. VR = rated VR
*See Fig.2 1 mA TJ=125°C
c, Typical Junction Capacitance 42 pF VR = 5VDC. (test signal range 100kHz to 1MHz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 W us
(Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
T, Max.Junction Temperature Range(*) -55 to 175 ''C
stg Max. Storage Temperature Range -55 to 175 ''C
thJL Max.Thermal Resistance Junction 36 ''C/W DC operation
to Lead (**)
RthJA Max.Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IRIJ
C) dPtot 1 .. . . .
dr-] < Rtr_(i-a) thermal runaway condition foradiode on its own heatsink
(**) Mounted 1 inch square PCB
2
