10BQ030 ,30V 1A Schottky Discrete Diode in a SMB packageapplications are in diskI Rectangular 1.0 Adrives, switching power supplies, converters, free-wheel ..
10BQ030 ,30V 1A Schottky Discrete Diode in a SMB packageBulletin PD-20708 rev. F 03/0310BQ0301 AmpSCHOTTKY RECTIFIERSMBMajor Ratings and Characterist ..
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10BQ030-10BQ030TR
30V 1A Schottky Discrete Diode in a SMB package
International
TOR Rectifier
Bulletin PD-20708 rev.F 03/03
1OBQ030
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Description! Features
Device Marking: IRIE
. . . The 1OBQ030 surface-mount Schottky rectifier has been
Characteristics 1080030 Units designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
'HAV) Rectangular 1.0 A drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 30 V . Small foot print, surface mountable
. Very low forward voltage drop
IFSM @tp=5ms sme 430 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.0Apk,TJ= 125°C 0.30 V reliability
T: range - 55to150 ''C
CATHODE ANODE
2.15 (.085)
1.80 (.071)
(.150) Ci) Ci) H
4.70 (.185)
4.10(.161)
2.40 (.094)
1.90 (.075) 'l---,-)',
130 (.051
0.76 (.030) 5.60 (.220)
5.00 (.197)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Ci) POLARITY S PART NUMBER
2.5 TYP.
(.098 TYP.)
0.30 (.012) _at, I
0.15 (.006) 2.0 TYP. -oi
(.079 TYP.)
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Bulletin PD-20708 rev.F 03/03
International
IEER Rectifier
Voltage Ratings
Part number 1080030
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Absolute Maximum Ratings
Parameters 1080 Units Conditions
IHAV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 106 °C, rectangularwave form.
|FSM Max. Peak One Cycle Non-Repetitive 430 5ps Sin-e or 3ps Rect. pulse 2Pi(igliri,y, 2523‘:
Surge Current * See Fig. 6 90 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ T, = 25 "C, IAS=1A’L= 6mH
I AR Repetitive Avalanche Current 1.0 A Current decaying Iinearlytozero in 1 psec
Frequencylimited by T, max.Va=1.5xVr typical
Electrical Specifications
Parameters 1080 Units Conditions
VFM Max. Forward Voltage Drop (1) 0.420 V @ 1A T, = 25 "C
0.470 V @ 2A
VFM Max. Forward Voltage Drop (1) 0.300 V @ 1A T., = 125 "C
0.370 V @ 2A
0.5 mA T J = 25 r’C
IRM Max. Reverse Leakage Current (1) 5.0 mA T J = 100 ''C VR = rated VR
15 mA T J = 125 "C
c, Max. Junction Capacitance 200 pF VR = SVDC, (test signal range 100KHz to 1Mhz) 25''C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse VMdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 1OBQ Units Conditions
T: Max.Junction Temperature Range(*) -55 to 150 ''C
Tstg Max.Storage Temperature Range -55 to 150 "C
RthJL Max. Thermal Resistance Junction 25 "C/W DC operation
to Lead (**)
RthJA Max.Thermal Resistance Junction 80 "CAN
to Ambient
wt Approximate Weight 0.10(0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IRI E
(*) dPtot < 1
dT] Rth(j-a)
(**) Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink
