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Partno	Mfg	Dc	Qty	Available	Descript
STTH6003CW	ST	N/a	500	avai	HIGH FREQUENCY SECONDARY RECTIFIER

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STTH6003CW
HIGH FREQUENCY SECONDARY RECTIFIER
STTH6003TV/CW
October 1999 - Ed: 5C
HIGH FREQUENCY SECONDARY RECTIFIER
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged either in ISOTOP or in TO-247, this
device is intended for use in low voltage, high
frequency inverters, free wheeling operation,
welding equipments and telecom power supplies.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACI-
TANCE ALLOW SIMPLIFIED LAYOUT
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAJOR PRODUCT CHARACTERISTICS
ISOTOP is a registered trademark of STMicroelectronics
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Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.008 x IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)
THERMAL RESISTANCES
RECOVERY CHARACTERISTICS
STTH6003TV/CW
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5 10 15 20 25 30 35 400P1(W)
Fig. 1: Conduction losses versus average current
(per diode).
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode). 50 100 150 200 250 300 350 400 450 5000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 3a: Relative variation of thermal impedance
junction to case versus pulse duration (ISOTOP).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 3b: Relative variation of thermal impedance
junction to case versus pulse duration (TO-247).
STTH6003TV/CW
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50 75 100 1250.0Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C). 50 100 150 200 250 300 350 400 450 5000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 5000
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode). 50 100 150 200 250 300 350 400 450 5000.0
S factor
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
STTH6003TV/CW
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