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STPS3L25S
LOW DROP POWER SCHOTTKY RECTIFIER
STPS3L25SJune 1999 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICSVERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
FEATURES AND BENEFITSSingle Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters.
Packaged in SMC, this device is especially in-
tended for use as an antiparallel diode on synchro-
nous rectification freewheel MOSFET’s at the
secondary of 3.3V SMPS and DC/DC units.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICSPulse test : * tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.3 x IF(AV) + 0.047 IF2 (RMS)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00.0
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3: Non repetitive surge peak forward currentversus overload duration (maximum values).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.0
Zth(j-a)/Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
STPS3L25S2/4
5 10 15 20 251E-31E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
Fig. 5: Reverse leakage current versus reversevoltage applied (typical values). 5 10 20 3010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.81
IFM(A)
Fig. 7-1: Forward voltage drop versus forwardcurrent (maximum values, high level).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.020
Rth(j-a) (°C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
0.1 0.2 0.3 0.4 0.5 0.60.0
5.0
IFM(A)
Fig. 7-2: Forward voltage drop versus forward
current (maximum values, low level).
STPS3L25S3/4
PACKAGE MECHANICAL DATASMC
FOOT PRINT DIMENSIONS (in millimeters). consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://Band indicates cathode
Epoxy meets UL94,V0
STPS3L25S4/4
:
www.ic-phoenix.com
.
