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Partno	Mfg	Dc	Qty	Available	Descript
STGW39NC60VD	ST	N/a	1200	avai	40 A, 600 V, very fast IGBT

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STGW39NC60VD
40 A, 600 V, very fast IGBT
July 2008 Rev 8 1/15
STGW39NC60VD
40 A - 600 V - very fast IGBT
Features Low CRES / CIES ratio (no cross conduction
susceptibility) IGBT co-packaged with ultra fast free-wheeling
diode
Applications High frequency inverters UPS Motor drivers Induction heating
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGW39NC60VD
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Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW39NC60VD Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula: Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistanceCTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× ---------------------------------------------------------------------------------------------------=
Electrical characteristics STGW39NC60VD
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2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. Static Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5. Dynamic
STGW39NC60VD Electrical characteristics
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Table 6. Switching on/off (inductive load)
Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
Electrical characteristics STGW39NC60VD
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Table 8. Collector-emitter diode
STGW39NC60VD Electrical characteristics
7/15
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Collector-emitter on voltage vs
collector current
Figure 7. Normalized gate threshold vs
temperature
Electrical characteristics STGW39NC60VD
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Figure 8. Normalized breakdown voltage vs
temperature
Figure 9. Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current