STGB3NB60KD ,N-CHANNEL 600V 3A TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220TO-220FP DPAK2D PAKV Collector-Emitter Vol ..
STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) CLAMPED VCES ..
STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTSTGB7NB40LZ2N-CHANNEL CLAMPED 14A - D PAKINTERNALLY CLAMPED PowerMESH™ IGBTTYPE V V ICES CE(sat) CS ..
STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTAPPLICATIONS■ AUTOMOTIVE IGNITION
STGB7NB60FD ,N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBTSTGP7NB60FD - STGB7NB60FD2N-CHANNEL 7A - 600V TO-220 / D PAKPowerMESH™ IGBTTYPE V V ICES CE(sat) (M ..
STGB7NB60HD ,N-CHANNEL 7ASTGB7NB60HD®N-CHANNEL 7A - 600V DPAK PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGB7NB60HD 600 V < 2. ..
SUR510EF , Epitaxial Planar Type NPN Silicon Transistor
SUR511EF , NPN/PNP Epitaxial Planar Silicon Transistor
SUR512EF , NPN/PNP Epitaxial Planar Silicon Transistor
SUR519J , Epitaxial planar NPN silicon transistor
SUR521H , Epitaxial Planar Type NPN Silicon Transistor
SUR522H , UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
STGB3NB60KD
N-CHANNEL 600V 3A TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
1/14May 2002
STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KDN-CHANNEL 3A - 600V - TO-220/DPAK/D2 PAK
PowerMESH™ IGBT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED
DESCRIPTIONUsing the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBT s, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD2/14
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) For “D” version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)MAIN PARAMETERS
3/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KDSWITCHING PARAMETERS
COLLECTOR-EMITTER DIODE (“D” VERSION)Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD4/14
Collector-Emitter On Voltage vs Collector Current
Normalized Collector-Emitter On Voltage vs Temp.Transconductance
Gate Threshold vs Temperature
Transfer CharacteristicsOutput Characteristics
5/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Total Switching Losses vs Temperature Emitter-collector Diode Characteristics
Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance
Capacitance VariationsNormalized Breakdown Voltage vs Temperature
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD6/14
Turn-Off SOA
Thermal Impedance for TO-220 / D2PAKThermal Impedance for DPAK
Thermal Impedance for TO-220FP
7/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
