STF35N65M5 ,N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220FPElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STF3HNK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP3HNK90Z STF3HNK90ZV Drain-source Voltage (V = ..
STF3N62K3 ,N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 DPAKTO-220FPD²PAK IPAKV Drain-source volta ..
STF3NK100Z ,N-channel 1000VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/DPAK TO-220FPV Drain-source voltage (V = 0 ..
STF3NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NK80ZSTP3NK80Z STF3NK80ZSTD3NK80Z-1V Drain-s ..
STF40NF20 ,N-channel 200VElectrical characteristics (curves) . . . . 63 Test circuit 94 Package mechanica ..
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
STF35N65M5
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220FP
October 2011 Doc ID 15325 Rev 3 1/22
STB35N65M5, STF35N65M5, STI35N65M5
STP35N65M5, STW35N65M5N-channel 650 V , 0.085 Ω , 27 A, MDmesh™ V Power MOSFET
in D²P AK, TO-220FP , I²P AK, TO-220, TO-247
Features Worldwide best R DS(on) * area Higher V DSS rating Excellent switching performance Easy to drive 100% avalanche tested High dv/dt capability
Applications Switching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W35N65M52/22 Doc ID 15325 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB/F/I/P/W35N65M5 Electrical ratings
Doc ID 15325 Rev 3 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 27 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W35N65M5
4/22 Doc ID 15325 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
STB/F/I/P/W35N65M5 Electrical characteristics
Doc ID 15325 Rev 3 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
