STF15NM60ND ,N-channel 600 VapplicationsDescriptionThe FDmesh™ II series belongs to the second generation of MDmesh™ technology ..
STF15NM65N ,N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh(TM) II Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified).CASETable 5. On/off statesSymbol P ..
STF16N65M5 ,N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, I²PAK, TO-220FPIPAK, TO-247V Drain-source ..
STF16NF25 ,N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitDPAKTO-220FPTO-220V Drain-source voltage 250 VDSV ..
STF17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFETapplications with low gate charge driving requirements.Table 1. Device summaryOrder codes Marking P ..
STF18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitD²PAK, TO-220FPTO-220,TO-247V Drain-source voltag ..
SUM110N06-05L ,N-Channel 60-V (D-S) 175C MOSFETS-21712—Rev. A, 07-Oct-023C - Capacitance (pF) g - Transconductance (S)fs I - Drain Current (A)D ..
SUM110N06-05L ,N-Channel 60-V (D-S) 175C MOSFETS-21712—Rev. A, 07-Oct-021SUM110N06-05LNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
SUM110N06-3M4L , N-Channel 60-V (D-S) 175 °C MOSFET
SUM110N06-3M4L-E3 , N-Channel 60-V (D-S) 175 °C MOSFET
SUM110N08-07L ,N-Channel 75-V (D-S) 175C MOSFETS-21717—Rev. A, 07-Oct-021SUM110N08-07LNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
SUM110N10-08 ,N-Channel 100-V (D-S) 200C MOSFETS-22126—Rev. A, 25-Nov-02 1SUM110N10-08New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
STF15NM60ND-STP15NM60ND
N-channel 600 V
April 2008 Rev 2 1/19
Features The worldwide best RDS(on)* area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Application Switching applications
DescriptionThe FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Figure 1. Internal schematic diagram Limited only by maximum temperature allowed
Table 1. Device summary
STB15NM60ND - STF/I15NM60ND
STP15NM60ND - STW15NM60NDN-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET2 PAK, I2P AK, TO-220, TO-220FP , TO-247
Contents STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 2/19
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical ratings3/19
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Electrical ratings STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 4/19
Table 4. Avalanche characteristics
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics5/19
2 Electrical characteristics(TCASE=25°C unless otherwise specified)
Table 5. On/off states Value measured at turn off under inductive load
Table 6. Dynamic Pulsed: pulse duration = 300 µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 6/19
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics7/19
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 8/19
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics9/19
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
Test circuit STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 10/19
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped Inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
