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Partno	Mfg	Dc	Qty	Available	Descript
STD9NM60N	ST	N/a	225	avai	N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET

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STD9NM60N
N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET
October 2010 Doc ID 18063 Rev 1 1/16
STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V , 0.63 Ω , 6.5 A TO-220, TO-220FP , DP AK
MDmesh™ II Power MOSFET
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology . This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Table 1. Device summary
Contents STD9NM60N, STF9NM60N, STP9NM60N
2/16 Doc ID 18063 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings
Doc ID 18063 Rev 1 3/16
1 Electrical ratings



Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 6.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Electrical characteristics STD9NM60N, STF9NM60N, STP9NM60N
4/16 Doc ID 18063 Rev 1
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics
Doc ID 18063 Rev 1 5/16
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%