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SSM6L16FETOSHIBAN/a148000avaiSmall-signal MOSFET 2 in 1


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STB85NF3LLT4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB85NF3LL-T4 ,N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSTB85NF3LL2N-CHANNEL 30V - 0.006Ω - 85A D PAKLOW GATE CHARGE STripFET™II POWER MOSFETTYPE V R IDSS ..
STB85NF55T4 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..


SSM6L16FE
Small-signal MOSFET 2 in 1
SSM6L16FE
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI) SSM6L16FE
High Speed Switching Applications
Analog Switch Applications Small package Low on-resistance Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.5 V)
Q2: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)

mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
mA
Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Unit: mm
Weight: 3 mg (typ.)
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