SSM5H16TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM5H90TU ,Multi-chip discrete device (N-ch + switching diode)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM5N05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.8 Ω (max) (@V = 4 V) on GS : ..
SSM5N15FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Small package Low ON resistance : R = 4.0 Ω (max) (@V = 4 V) on GS : R = 7.0 ..
SSM5N15FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ ..
SSM5N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
STB6NB50T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB6NB50®N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB6NB ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
SSM5H16TU
Multi-chip discrete device (N-ch + SBD)
SSM5H16TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H16TU DC-DC Converter Applications
• 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one
package.
• Low RDS (ON) and Low VF
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Schottky Barrier Diode (Ta = 25°C) MOSFET and Diode (Ta = 25°C) Unit °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7 mg (typ.) 5
