SSM5G10TU ,Multi-chip discrete device (P-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM5H01TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H05TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H07TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H08TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H16TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
STB60NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STB60NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB6100 ,STB6100 databriefapplications. The STB6100 is controlled by a simple two wireinterface and has been designed to mini ..
STB6100 ,STB6100 databriefapplications such as high definition TV andbroadband internet.Figure 2. Integrated silicon tuner3 3 ..
STB6100/ ,STB6100 databriefSTB61008PSK/QPSK direct conversion tuner ICDATA BRIEFDESCRIPTION Packaged in a small QFN 32-pin pac ..
STB6NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB6NA60 600 V < ..
SSM5G10TU
Multi-chip discrete device (P-ch + SBD)
SSM5G10TU
Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5G10TU DC-DC Converter Applications
• 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one
package.
• Low RDS(ON) and Low VF
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Schottky Barrier Diode (Ta = 25°C) MOSFET and Diode (Ta = 25°C) Unit °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 7 mg (typ.) 5
