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SSM4K27CT
Small-signal MOSFET
SSM4K27CT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM4K27CT Switching Applications Small package Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (top view) Electrode Layout (bottom view) Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment
is protected against static electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials. 2 4
Polarity marking 13 3
1 Gate
2 Source
3 Drain
4 Drain
