SSM3K36FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K37MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
SSM3K43FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K44FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate l ..
STB40NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB40NF10T4 ,N-CHANNEL 100VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTB40NF10T4 100 V < 0.028 Ω 50 A
SSM3K36FS
Small-signal MOSFET
SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K36FS High-Speed Switching Applications
• 1.5-V drive Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V)
: Ron = 0.85 Ω (max) (@VGS = 2.5 V)
: Ron = 0.66 Ω (max) (@VGS = 4.5 V)
: Ron = 0.63 Ω (max) (@VGS = 5.0 V)
Absolute Maximum Ratings (Ta = 25 °C) Note1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.36 mm2 × 3)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 2.4 mg (typ.)
1 2
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