SSM3J314T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １２３Characteristic Symbol Rating Unit Drain-Source voltage V -3 ..
SSM3J321T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J325F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM3J326T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit V -30 V Drain-source volta ..
SSM3J327F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J327R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-source voltage ..
STB13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
STB130NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB130NS04ZBT4 ,N-CHANNEL CLAMPEDAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSVDr ..
STB13NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB13NK60Z-1 ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB13NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP13NK60ZSTB13NK60Z/-1 STP13NK60ZFPSTW13NK60ZV ..
SSM3J314T
Small-signal MOSFET
SSM3J314T TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J314T High Speed Switching Applications
• 4.0V drive Low ON-resistance: Ron = 100mΩ (max) (@VGS = -4.0 V)
Ron = 54mΩ (max) (@VGS = -10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 10 mg (typ.)
