SSM3J305T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA ― Tosh ..
SSM3J306T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V −30 V ..
SSM3J307T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J314T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １２３Characteristic Symbol Rating Unit Drain-Source voltage V -3 ..
SSM3J321T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J325F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
STB12NK80ZT4 ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STB12NM50 ,N-CHANNEL 500VSTP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-12 2N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D PAK/I PAK ..
STB12NM50FDT4 ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STB12NM50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)12NM50(-1) STP12NM50FPV Drain-source Volta ..
STB13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
STB130NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SSM3J305T
Small-signal MOSFET
SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J305T High-Speed Switching Applications • 4 V drive
• Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V)
Ron = 237 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Note 2: Pulse test
Unit: mm
Weight: 10 mg (typ.)
