SSM3J15FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN TYP. MAXUNITGate le ..
SSM3J15TE , Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
SSM3J16CT ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
STB11NM60T4 ,N-Channel 600VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STB11NM80 ,N-CHANNEL 800 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 800 VDS GSV Drain- ..
STB11NM80T4 ,N-CHANNEL 800 VSTP11NM80 - STF11NM80STB11NM80 - STW11NM802N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D PAK/TO-247MD ..
STB120NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB120NF10T4 ,N-CHANNEL 100VSTB120NF10STP120NF10N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220STripFET™ II POWER MOSFETTYPE V R I ..
STB120NF10T4 ,N-CHANNEL 100VAPPLICATIONS■ AUDIO AMPLIFIERS■ POWER TOOLSOrdering InformationSALES TYPE MARKING PACKAGE PACKAGING ..
SSM3J15FV
Small-signal MOSFET
SSM3J15FV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FV High-Speed Switching Applications
Analog Switch Applications Optimum for high-density mounting in small packages Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V) : RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2)
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 1.5 mg (typ.)
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