SSM2210S ,Audio Dual Natched NPN transistorCHARACTERISTICS at Vcs = 15V, -4(y'C 5 T, 3 +85°C, unless otherwise noted.
SSM-2210
PARAMETER S ..
SSM2210SZ ,Audio Dual Matched NPN Transistor
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SSM2210-SSM2210S
Audio Dual Natched NPN transistor
ANALOG
DEVICES
Audio Dual Matched
lllPl1 Transistor
SSM-221 ll
FEATURES
. Very Low Voltage Noise ............. tii) 100Hz, Inv/VrTz MAX
. Excellent Current Gain Match ............................ 0.5% TYP
. Tight VBE Match (Vos) ...................................... 200:1V MAX
. Outstanding Offset Voltage Drift .............. 0.030V/°C TYP
. High Gain-Bandwldth Product ..................... 200MHz TYP
. Low Cost
Direct Replacement For LM394BN/CN
ORDERING INFORMATION t
PACKAGE OPERATING
PLASTIC so TEMPERATURE
a-pm 8-PIN RANGE
SSM2210P ssmzaos' XIND'
. XIND " 40°C to +85°C
t For availability on so package, contact your local sales office.
GENERAL DESCRIPTION
The SSM-2210 is a dual NPN matched transistor pair specifi-
cially designed to meet the requirements of ultra-low noise au-
dio systems.
With its extremely low input base spreading resistance (rbb' is
typically 28(2), and high current gain ' typically exceeds 600
© Ic = 1 mA), systems implementing the SSM-2210 can achieve
outstanding signal-to-noise ratios. This will result in superior
performance compared to systems incorporating commercially
available monolithic amplifiers.
The equivalent input voltage noise of the SSM-2210 is typically
only 0.8nVN Hz_overthe entire audio bandwidth of 20Hz to 2OKHz.
Excellent matching of the current gain (Ahrs) to about 0.5% and
low Vos of less than 50pV (typical) make it ideal for symmetri-
cally balanced designs which reduce high order amplifier har-
monic distortion.
Stability of the matching parameters is guaranteed by protec-
tion diodes across the base-emitter junction. These diodes pre-
vent degradation of Beta and matching characteristics due to
reverse biasing of the base-emitter junction.
The SSM-2210 is also an ideal choice for accurate and reliable
current biasing and mirroring circuits. Furthermore, since a cur-
rent mirror's accuracy degrades exponentially with mismatches
of VBE's between transistor pairthe low Vos of the SSM-2210
will preclude offset trimming in most circuit applications.
The SSM-221 0 is offered in an 8-pin epoxy DlP and 8-pin so, its
performance and characteristics are guaranteed over the ex-
tended industrial temperature range of -4tPC to +85°C.
PIN CONNECTIONS
8-PIN _
PLASTIC DIP
(P-Suffix) l
8-PIN SO
(S-Suffix) l,
ABSOLUTE MAXIMUM RATINGS
Collector Current (lc) ....................................................... 20mA
Emitter Current (IE) ..r.........r....F.-.-...-rr-r- 20mA
Collector-Collector Voltage (BC) ..................................... 40V
Collector-Base Voltage (Bvcao) ........................................ 40V
Collector-Emitter Voltage (BVcso) ..................................... 40V
Emitter-Emitter Voltage (BVEE) .......................................... 40V
Operating Temperature Range ....................... 410°C to +85cC
Storage Temperature .................................... -65'C to +125:C
Junction Temperature ................................... -6rc to +150'C
Lead Temperature (Soldering, 60 sec) ........................ +300°C
PACKAGE TYPE ejA(NOTE 1) lc UNITS
8-Pin Plastic DIP (P) 110 so cw
8-Pin so (S) 160 44 CW
l. e A is specified torworstcase mounting conditions. i.e.. 6A IS specmed for dewce
in socket tor P-DIP packages; 9,, is specified for device soldered to printed
circuit board for SO packages.
SSM-221 il
ELECTRICAL CHARACTERISTICS at Vce = 15V, IC = 10pA, T, = 25'C, unless otherwise noted.
SSM-221 0
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT S
T l x 1mA (Note l) 300 605 -
Current Gain hFE 'c = 10M 200 550 _
Current Gan Match AhFE 10uA S IC s 1mA (Note 2) - 0.5 5 %
IC x 1mA. Va, " 0 (Note 3)
ID x IOHz - 1.6 2
Nose Voltage Densny en IO = IOOHz - 0 9 1 WWW
fu = 1kHz - 0.85 1
t, = 10kHz - 0.85 1
Off tVolta e v Va, = o - 10 200 v
se 9 05 'c = 1mA "
Offset Voltage 0 s V S V (Note 4)
V / V CB MAX - 10 50 V
Changevs Vce A as" CB mAslcs 1mA (Note 5) H
Offset Voltage Change V = 0V
AV / I CB - 5 70 V
vs Collector Current os A C IPA s 'c s1mA (Note 5) u
Breakdown Voltage 8VCEO 40 - - V
GaIn-BandWIdth Product f, IC = 10mA, VCE = 10V - 200 - MHz
Collector-Base
I V = V - 25 500 A
Leakage Current CBO CB MAX p
Collector-Collector
I V = V N , 7 - A
Leakage Current CC CC MAX ( ores 6 ) 35 500 p
Cohector.Emeter V = V (Notes 6, 7)
CE MAX _ 35 A
Leakage Current CES VBE = 0 500 p
Input Bas Current IB 'c = 10yA - - 50 nA
Input Offset Current IOS [c = 10pA - - 6.2 nA
Collector Saturation I = 1mA
V C - J05 O, V
Voltage CEtSAT; IB " 100M 2
Output Capacstance Cos, Va, a 15V. ls " 0 - 23 - pF
Bulk Resistance rBE 10PA s IC s 10mA (Note 6) - 0.3 1 6 n
Collector-Collector
V = 0 - 35 - F
Capacitance Ca: cc p
NOTES:
1. Current gam us guaranteed with Collector-Base Voltage (Vca) swept from Oto
V at the indicated collector currents,
2. Current Gain Match (AhFE) is defined as:
Aan = I
100(AIB) (hFErmn)
3. Noise Voltage Density IS guaranteed, but not 100% tested.
4. This IS the maximum change In Vos as VCB Is swept from 0V to 40V.
5. Measured at Ic =10pA and guaranteed by desugn over the specmed range of Ic
6. Guaranteed by design.
7. 'cc and tces are verified by measurement of I
S$M-221 U
ELECTRICAL CHARACTERISTICS at Vcs = 15V, -40oC 5 T, f +85°C, unless otherwise noted.
SSM-2210
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I =1mA (Note!) 300 - -
Current Gan hFE I: = 10PA 200 - -
Offset Volta e v VCB = 0 220 v
g OS Ic = 1mA ll
Average Offset TCV 10M f ic s1mA.0 s Vca s VMAX (Note 2) - 0.08 1 uV/“C
Voltage Drift os Vos Trimmed to Zero (Note 3) - 0.03 0.3
Input Bias Current ' Ic x 10M - - 50 nA
Input Offset Current los IC = 10PA - - 13 nA
Input Offset
T I = 1 4 - 4 "
Current ant Clos C 00A (Note ) 0 150 " C
Collector-Base
Leakage Current G, V03 = VMA" _ 3 - nA
Collector-emitter
I V = V ,V I - -
Leakage Current CES CE MAX BE O 4 nA
Co|lector-Collec10r
Leakage Current ICC VCC = VMAX - 4 - nA
NOTES:
l, Current gan IS guaranteed with Ctglector-Base Voltage (Vca) swept from O to
VMAX at the indicated collector current.
2. Guaranteed by Vos test (choS l .T‘E v36), T = 298K for T A = 25°C.
3. The mmal zeco offset voltage is established by adjusting the ratio of lc, to lc2 at
T, = 25°C. This ratio must be held to 0.003% over the entire temperature range.
Measurements are taken at the temperature extremes and 25°C,
4. Guaranteed by 6esign.
TYPICAL PERFORMANCE CHARACTERISTICS
LOW FREQUENCY NOISE NOISE FIGURE " EMITTER-BASE
(0.1 Hz TO 10 Hz) COLLECTOR CURRENT LOG CONFORMITY
" T " I .
" Ts = zs-c VC. 3 av ,
" R, = thit so ' 1km n = "rc !
' 12 0.: ri t
E n - t I i
3 WWW» Cn" " E l
- V E o g "
Ir'', o c, 0.1 '
__u_ . JIJL. “.1 g 5 8 I
1: wow 3 o ,
l n3: 10m E
o -0.1 I '
0.001 0.01 0.1 1.0 m" "r" 19" w" 10" 10']
COLLECTOR CUFIKENY (MA)
COLLECTOR CURRENT (A)
SSM-2210
TYPICAL PERFORMANCE CHARACTERISTICS
‘07“. NOISE (nV/«flu NOISE VOLTAGE DENSITY (uVI MHz)
PRODUCT WM!)
g UNITV-GAIN BANDWIOTH
NOISE VOLTAGE
DENSITY " FREQUENCY
Ta * .zs-c
Vc: I "
V thy 1 10 100 u 10tt 100k
FREQUENCY (m)
TOTAL NOISE "
COLLECTOR CURRENT
O 1:111“:
=100eit
s-ttmn
as: tut
0.001 0.01 0.1 1
COLLECTOR CURRENT (MA)
GAIN BANDWIDTH
" COLLECTOR CURRENT
0.001 0.01 0.1 1 10 100
COLLECTOR CURRENT (MA)
NOISE VOLTAGE DENSITY (nVIx/HJ)
cunnEm GAIN — "FE
vagou) — (vous;
NOISE VOLTAGE DENSITY
vs COLLECTOR CURRENT
w,,,,''''
o 3 o a "
COLLECTOR CURRENT um
CURRENT GAIN "
COLLECTOR CURRENT
vc. = "
0.001 cm 0.1 t
COLLECTOR CURRENT (mA)
BAStrEMlTTER-ON-
VOLTAGE vs COLLECTOR
CURRENT
" 1 111111 1 ,' 1
n:nm i l 1 L
chxSV !
1 i 1 '.' 1
" 1 1 , 1/
1 t 1 I $1" I
i ' I 1
0.5 l, l / 1 [
1 i . 17 i, i '
pk'', 1| I. i, I ,
tt.6 A'' , i, 1 _
1 1 1 l
ih3 " 111. 1. 111J
0.001 0.01 0.1 I 10
COLLECTOR CURRENT (mA)
NOOSE CURRENT (pAI Jig)
cunnsm am — nFE
um — INPUT nestsnuca (nu)
NOISE CURRENT
DENSITY " FREQUENCY
Ta x o2S'C
Veg I "
l¢:10mA
Ic=lmA
1c * mu
0.1 1 " 100 " 1m 100h
FREQUENCY (Hz)
CURRENT GAIN
" TEMPERATURE
1 IC = mm
(Excwnes kara)
-rs -25 25 " 125 175
TEMPERATURE CC)
SMALL-SIGNAL INPUT
RESISTANCE " COLLECTOR
CURRENT
0.001 I (
th001 thot 0.1 l 10 mo
COLLECTOR CURRENT (MA)
ssm-zzm "
TYPICAL PERFORMANCE CHARACTERISTICS Continued
SMALL-SIGNAL OUTPUT
CONDUCTANCE vs SATURATION VOLTAGE
COLLECTOR CURRENT vs COLLECTOR CURRENT
woo IO
Ks ' "
, t to
's f, 0.1
i, o., a
0.01 _ I om _
thot" tht" 0.1 , " 100 0.001 001 on I IO
COLLECTOR CURRENT(mA) COLLECTOR CURRENTimA)
COLLECTOR-BASE COLLECTOR-TO-COLLECTOR
CAPACITANCE " CAPACITANCE vs COLLECTOR-
REVERSE BIAS VOLTAGE TO-SUBSTRATE VOLTAGE
1. * are 7.1: are
5 t 30
E E Ns,
't 'oats
J us '
0 " 20 30 " 50 0 It " 2tt 30 " 50
REVERSE BIAS VOLTAGE (VOLTS)
COLLECTOR-TO-COLLECTOR
C0CCECTDRmhSuBSTRArE VOLTAGE (VOLTS)
COLLECTOR-TO-BASE
LEAKAGE vs TEMPERATURE
’cao — cunnsm (M)
25 60 75 100 ,
TEMPERATURE PC)
COLLECTOR-TO-COLLECTOR
LEAKAGE vs TEMPERATURE
'06 - CUHRENT (nA)
" 50 75 100 I:
TEMPERATURE CC)
EMITTEH-BASE CAPACITANCE
" REVERSE BIAS VOLTAGE
CAPACITANCE vs
REVERSE BIAS VOLTAGE
T Ts “arc
a. ! '
8 1.0 's.. ! 6
lo, 'm""'---.---,..,.. 13
0 IO 20 30 " 50 tt
REVERSE BIAS VOLTAGE (VOLTS)
r. = .251:
20 30 " 50
REVERSE BIAS VOLTAGE (VOLTS)
