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SSM1N45B
450V N-Channel B-FET
SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.5A, 450V, R = 4.25Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC) planar, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to 100% avalanche tested minimize on-state resistance, provide superior switching Improved dv/dt capability performance, and withstand high energy pulse in the Gate-Source Voltage ± 50V guaranteed avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration. D !!!! !!!! D ● ●● ● ● ●● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ●● ● S ● ●● ● G!!!!!!!! ● ● ● ●● ● ● ● G SOT-223 !!!!!!!! SSM Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSM1N45B Units V Drain-Source Voltage 450 V DSS I - Continuous (T = 25°C) Drain Current 0.5 A D C - Continuous (T = 100°C) 0.32 A C I (Note 1) Drain Current - Pulsed 4.0 A DM V Gate-Source Voltage ± 50 V GSS E (Note 2) Single Pulsed Avalanche Energy 108 mJ AS I Avalanche Current (Note 1) 0.5 A AR E (Note 1) Repetitive Avalanche Energy 0.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) 0.9 W P A D Power Dissipation (T = 25°C) 2.5 W L - Derate above 25°C 0.02 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R (Note 6b) Thermal Resistance, Junction-to-Ambient -- 63 °C/W θJA ©2004 Rev. A, May 2004
