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SI7900EDN
Common Drain Dual N-Channel 20-V (D-S) MOSFET
VISHAY
New Product
Si7900EDN
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. New PowerPak'" Package
VDS (V) mstom (Q) ID (A) - Low-Thermal Resistance, RthJC
0.026 @ VGS = 4.5 v 9 - Low 1.07-mm Prohle
20 0.031 @ VGs = 2.5 v 8 3000 V ESD Protection
. Protection Switch for 1-2 Li-ion Batteries
PowerPAK"' 1212-8 0 o
2.4 kg - 2.4 kg _
G1 '- G2 I-
N-Channel N-Channel
Bottom Mew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDs 20
Gate-Source Voltage VGs l 12
TA = 25°C 9 6
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C 6.4 4.3
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)a ls 2.9 1.4
TA = 25"C 3.2 1.5
Maximum Power Dissipation" PD W
TA = 85°C 1.7 0.79
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 30 38
Maxi J tion-to-Ambienta R
axlmum unc Ion o m Ien Steady State WA 65 82 ''CA/V
Maximum Junction-to-Case Steady State RthJc 1.9 2.4
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71425 www.vishay.com
S-03369-Rev. A, 02-Apr-01
Si7900EDN VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT., = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 WA 0.40 V
VDS=0VYVGS= i4.5V i1 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
VDS=16V,VG5=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=16V,VGS=OV,TJ=85°C 20
On-State Drain Current3 |D(0n) VDS = 5 V, I/ss = 4.5 V 20 A
VGS = 4.5 V, ID = 6.5 A 0.021 0.026
Drain-Source On-State Resistancea rDS(on) VGs = 2.5 V, ID = 5.8 A 0.025 0.031 Q
VGS =13 v, ID = 5.0 A 0031 0.039
Forward Transconductancea 9ts VDS = 10 V, ID = 6.5 A 25 S
Diode Forward Voltage3 Vsro ls = 1.5 A, VGS = 0 V 0.65 1.1
Dynamicb
Total Gate Charge Qg 12.5 18
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 2.7 nC
Gate-Drain Charge di 2.7
Turn-On Delay Time [mm 0.7 1.0
Rise Time tr VDD =10 V, RL = 10 g 1.3 2.0 us
Turn-Off Delay Time imam ID - 1 A, VGEN = 4.5 V, Rs = 6 Q 5.5 8.0
Fall Tlme tf 4.6 7.0
a. Pulsetest; pulse width 5 300 113. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage
8 10,000
ici' i? 100
2 4 Y, 10
8 isis'
[i', g 1
_ 2 _0
o _,,,,w'''' 0.01
0 3 6 9 12 15 18 0 3 6 g 12 15
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71425
2 S-03369-Rev. A, 02-Apr-01
VISHAY
Si7900EDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 _ _
- VGS = 5 thru 2 V
Ci.". ig"
E 18 E
Es 12 E
CI 1.5V Cl
0 2 4 6 8 10 12
Vias - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
cg [ty..
6 cli,r
li'" 0
0 6 12 18 24 30
ID - Drain Current(A)
Gate Charge
VDS = 10 v ,,,w'''''"
E 4 - b-- 9 A / A
53 ,,,w''''" ID
[ll 3 / .g g
g w tT,
(I) w''''''" OF E
s) ' 6 <23
2 2 ' I V
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Transfer Characteristics
24 C - T C //I;
18 I//
0.0 0.5 1.0 1.5 2.0 2.5
N/ss - Gate-to-Source Voltage (V)
Capacitance
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 l l
VGS = 4.5 V
1-5 7 lo--? A /
1.4 ",,,i'''
0.8 ,/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71425
S-03369-Rev. A, 02-Apr-01
www.vishay.com
Si7900EDN
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.06
tli iir
E To = 150°C 3
g .2 f ID - 9 A
o g 0.04
In J,i 0.02 'ss-...,
0 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 I l 80
ID = 250 0A
0.2 'ss,
U -0.0
_s'is g N
g "ss g 40 l
af?, -0 2 'rc a t
g 's, 'i,
"ss, 20
-0.4 "ss, 'N,
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
it' Duty Cycle = 0.5
.S a 0.2
2' E Notes:
lt g -,,,C,
s a DM
g ,5 l
E -l " _
ts t2 "
z 1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 65°CNV
V 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71425
4 S-03369-Rev. A, 02-Apr-01
“3% Si7900EDN
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
"ic?,' Duty Cycle = 0.5
l: m 0.2
g E 0.1
'i' E 0.1
Z 0.02
Single Pulse
0.00001 0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (sec)
Document Number: 71425 www.vishay.com
S-03369-Rev. A, 02-Apr-01 5
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