SB580 ,Schottky Rectifiersapplications.DO-201AD• Low power loss, high efficiency.COLOR BAND DENOTES CATHODE• High current c ..
SB5H100 ,High Voltage Schottky Rectifier, Forward Current 5.0AapplicationsDia.• Guardring for overvoltage protection0.375 (9.5)Mechanical Data0.285 (7.2)Case: JE ..
SB5H100 ,High Voltage Schottky Rectifier, Forward Current 5.0AThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbol SB5H90 SB5H100 UnitMaxim ..
SB5H90 ,High Voltage Schottky Rectifier, Forward Current 5.0A30-Jul-02 1SB5H90 and SB5H100Vishay Semiconductorsformerly General SemiconductorRatings and Charact ..
SB60-05H ,Schottky Barrier Diode (Twin Type ?Cathode Common) 50V, 6A RectifierAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniRV epetitive Peak ..
SB60-05K ,Schottky Barrier Diode (Twin Type ?Cathode Common) 50V, 6A RectifierAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniRV epetitive Peak ..
SCH2807 ,Nch+SBDAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit[MOSFET]Drain-to-Source ..
SCH2816 ,Nch+SBDAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit[MOSFET]Drain-to-Source ..
SCH2819 , MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
SCH2830 , MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
SCH3112I-NU , LPC IO with 8042 KBC, Reset Generation, HWM and Multiple Serial Ports
SCH3116I-NU , LPC IO with 8042 KBC, Reset Generation, HWM and Multiple Serial Ports
SB580
Schottky Rectifiers
SB520-SB5100 SB520 - SB5100 Features • Metal to silicon rectifier, majority carrier conduction. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD • Low power loss, high efficiency. COLOR BAND DENOTES CATHODE • High current capability, low V F. • High surge capacity. Schottky Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 520 530 540 550 560 580 5100 V Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 100 V RRM I Average Rectified Forward Current F(AV) 5.0 A .375 " lead length @ T = 75°C A I Non-repetitive Peak Forward Surge Current FSM 150 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -50 to +150 T °C stg T Operating Junction Temperature -50 to +150 C ° J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 5.0 W D R Thermal Resistance, Junction to Ambient 25 C/W ° θJA Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 520 530 540 550 560 580 5100 V Forward Voltage @ 5.0 A 0.55 0.67 0.85 V F I 0.5 mA R Reverse Current @ rated V T = 25°C R A 50 25 mA T = 100°C A C Total Capacitance T 500 380 pF V = 4.0 V, f = 1.0 MHz R 2001 SB520 - SB5100, Rev. C
