PSMN9R5-100PS Fast Delivery |IC PHOENIX CO.,LIMITED

PSMN9R5-100PS ,N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This prod ..
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PSMN9R5-100PS
N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220
TO-220AB PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T022017 October 2013 Product data sheet General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for standard level gate drive Applications DC-to-DC converters• Load switching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 89 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 211 W
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 8.16 9.6 mΩ
Dynamic characteristics
QGD gate-drain charge - 23 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 60 A; VDS = 50 V;
Fig. 14; Fig. 15 - 82 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
VGS = 10 V; Tj(init) = 25 °C; ID = 89 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω - 177 mJ
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220 Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected todrain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN9R5-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN9R5-100PS PSMN9R5-100PS Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 63 AID drain current - 89 A - 355 A
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Symbol Parameter Conditions Min Max Unit
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 211 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C - 89 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 355 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 89 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω 177 mJ
003aae016
100 50 100 150 200Tmb(°C)
(A)
Fig. 1. Continuous drain current as a function ofmounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as afunction of mounting base temperature
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
003aae017
103 10 102 103VDS(V)
(A) Limit RDSon= VDS/ID
100ms10ms1ms=10µs
100µs
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction to
mounting base
Fig. 4 - 0.38 0.71 K/W
003aad142
10-1 10
Zth(j-mb)
(K/W)
single shot
δ=0.5
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11 3 4 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11 - 4.8 V
VDS = 100 V; VGS = 0 V; Tj = 125 °C - - 100 µAIDSS drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 4 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12 - 17.3 mΩ
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 12 23.5 27.4 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 8.16 9.6 mΩ internal gate
resistance (AC)
f = 1 MHz - 0.7 - Ω
Dynamic characteristics
ID = 0 A; VDS = 0 V; VGS = 10 V; Fig. 14 - 67 - nCQG(tot) total gate charge 82 - nC
QGS gate-source charge
ID = 60 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 - 21 - nC
QGS(th) pre-threshold gate-source charge ID = 60 A; VDS = 50 V; VGS = 3 V;
Fig. 14 13.1 - nC
QGS(th-pl) post-threshold gate-
source charge
ID = 60 A; VDS = 50 V; VGS = 10 V;
Fig. 14 7.8 - nC
QGD gate-drain charge ID = 60 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 23 - nC
VGS(pl) gate-source plateauvoltage VDS = 50 V; Fig. 14; Fig. 15 - 4.5 - V
Ciss input capacitance - 4454 - pF
Coss output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 - 302 - pF
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Symbol Parameter Conditions Min Typ Max Unit
Crss reverse transfercapacitance - 185 - pF
td(on) turn-on delay time - 22 - ns rise time - 25.2 - ns
td(off) turn-off delay time - 52.2 - ns fall time
VDS = 50 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 22.8 - ns
Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V
trr reverse recovery time - 61.5 - ns recovered charge
IS = 20 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V - 157 - nC
003aae025 8 12 16 20VGS(V)
RDSon
(mΩ)
Fig. 5. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aae022
8000 3 6 9 12VGS(V)(pF) Ciss
Crss
Fig. 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
NXP Semiconductors PSMN9R5-100PS
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
003aae021
150 20 40 60 80ID(A)
gfs
(S)
Fig. 7. Forward transconductance as a function of
drain current; typical values
003aae019
100 0.5 1 1.5 2VDS(V)
(A)
VGS(V)=4
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae020 2 4 6VGS(V)
(A)=25°CTj= 175°C
Fig. 9. Transfer characteristics: drain current as
03aa35
VGS(V)0 642
10-1(A)
min typ max
Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

Partno	Mfg	Dc	Qty	Available	Descript
PSMN9R5-100PS \|PSMN9R5100PS	NXP/PH	N/a	10000	avai	N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220
PSMN9R5-100PS \|PSMN9R5100PS	NXP	N/a	76	avai	N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220