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PSMN8R7-80PS
N-channel 80 V 8.7 m鈩?standard level MOSFET in TO-220
Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Measured 3 mm from package.
PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
Rev. 02 — 1 November 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25°C; VGS =10V; see Figure 1 --90 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --170 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =10A; = 100 °C; see Figure 12
--14 mΩ
VGS =10V; ID =10A; =25°C; see Figure 13
[1] -7.5 8.7 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =40 V; see Figure 14;
see Figure 15
-11 - nC
QG(tot) total gate charge - 52 - nC
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
VGS =10V; Tj(init) =25 °C; =90A; Vsup≤80V; RGS =50 Ω; unclamped
--120 mJ
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Pinning information Ordering information
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN8R7-80PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100 °C; see Figure 1 -64 A
VGS =10V; Tmb=25 °C; see Figure 1 -90 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 - 361 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - 170 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 90 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 361 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =90A;
Vsup≤80 V; RGS =50 Ω; unclamped 120 mJ
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.54 0.88 K/W
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 µA; VGS =0V; Tj= -55°C 73 --V= 250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10 4.6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 10
2.3 34V
IDSS drain leakage current VDS =80V; VGS =0V; Tj =25°C - 0.3 5 µA
VDS =80V; VGS =0V; Tj= 125°C - - 100 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10 V; ID =10A; Tj =175 °C;
see Figure 12 20.8
VGS =10 V; ID =10A; Tj =100 °C;
see Figure 12 14 mΩ
VGS =10 V; ID =10A; Tj =25°C;
see Figure 13
[1] -7.5 8.7 mΩ internal gate resistance (AC) f=1 MHz - 1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 44 - nC =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-52 - nC
QGS gate-source charge - 15 - nC
QGS(th) pre-threshold gate-source charge ID =25A; VDS =40V; VGS =10V;
see Figure 14
-9.2 - nC
QGS(th-pl) post-threshold gate-source charge - 5.8 - nC
QGD gate-drain charge ID =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-11 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS=40 V; see Figure 15 -4.6 - V
Ciss input capacitance VDS =40V; VGS =0V; f=1MHz; =25 °C; see Figure 16 3346- pF
Coss output capacitance - 296 - pF
Crss reverse transfer capacitance - 158 - pF
td(on) turn-on delay time VDS =40V; RL =1.6 Ω; VGS =10V;
RG(ext) =4.7Ω
-21 - ns rise time -26 - ns
td(off) turn-off delay time - 46 - ns fall time -20 - ns
Source-drain diodeVSD source-drain voltage IS =10A; VGS =0V; Tj =25°C;
see Figure 17 0.79 1.2 V
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220[1] Measured 3 mm from package.
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0V; VDS =40V
-42 - ns recovered charge - 66 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN8R7-80PS
N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220
