IC Phoenix
 
Home ›  P › P32 > PSMN8R5-60YS,N-channel LFPAK 60 V, 8 m惟 standard level MOSFET
PSMN8R5-60YS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
PSMN8R5-60YS |PSMN8R560YSNXPN/a1489avaiN-channel LFPAK 60 V, 8 m惟 standard level MOSFET


PSMN8R5-60YS ,N-channel LFPAK 60 V, 8 m惟 standard level MOSFETApplications„ DC-to-DC converters„ Motor control„ Lithium-ion battery protection„ Server power supp ..
PSMN8R7-80BS ,N-channel 80 V 8.7 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN8R7-80PS ,N-channel 80 V 8.7 m鈩?standard level MOSFET in TO-220Applications„ DC-to-DC converters„ Motor control„ Load switching„ Server power supplies1.4 Quick re ..
PSMN9R5-100BS ,N-channel 100 V 9.6 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN9R5-100PS ,N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This prod ..
PSMN9R5-100PS ,N-channel 100 V 9.6 m鈩?standard level MOSFET in T0220ApplicationsDC-to-DC converters•• Load switchingMotor control•• Server power supplies4. Quick refer ..
QL63D5SA , InGaAlP Laser Diode
QLX4600SIQT7 , Quad Lane Extender
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM20TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM20TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE

PSMN8R5-60YS
N-channel LFPAK 60 V, 8 m惟 standard level MOSFET
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Rev. 01 — 22 December 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits Advanced TrenchMOS provides low
RDSon and low gate charge High efficiency gains in switching
power converters Improved mechanical and thermal
characteristics LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 60 V drain current Tmb =25°C; VGS =10V;
see Figure 1
--76 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 3 - - 106 W junction temperature -55 - 175 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; =76 A; Vsup≤60V;
RGS =50 Ω; unclamped
--97 mJ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =60A;
VDS=30 V; see Figure 15 and 14
-7.7 -nC
QG(tot) total gate charge VGS =10V; ID =60A;
VDS=30 V; see Figure 14 and 15
-39 - nC
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Pinning information Ordering information
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =15A; = 100 °C; see Figure 12 - 12.8 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13
-5.6 8 mΩ
Table 1. Quick reference …continued
Table 2. Pinning information source
SOT669 (LFPAK) source source gate D mounting base; connected to
drain
Table 3. Ordering information
PSMN8R5-60YS LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -54 A
VGS =10V; Tmb =25°C; see Figure 1 -76 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 2 -303 A
Ptot total power dissipation Tmb =25°C; see Figure 3 -106 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering
temperature
-260 °C
Source-drain diode source current Tmb =25°C - 76 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 303 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =76A; Vsup≤60V;
RGS =50 Ω; unclamped
-97 mJ
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.63 1.42 K/W
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 54 - - V =250 µA; VGS =0V; Tj =25°C 60 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS= VGS; Tj =25 °C; see Figure 10
and 11
234 V
VGSth ID =1mA; VDS= VGS; Tj= -55 °C; see Figure 11 --4.6 V =1mA; VDS= VGS; Tj =175 °C;
see Figure 11
0.95 - - V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.03 2 µA
VDS =60V; VGS =0V; Tj= 125°C --50 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 175 °C;
see Figure 12
-12 18.4 mΩ
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 12
--12.8 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13
-5.6 8 mΩ gate resistance f=1 MHz - 0.61 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =60A; VDS =30V; VGS =10V;
see Figure 14 and 15
-39 - nC =0A; VDS =0V; VGS =10V - 33 - nC
QGS gate-source charge ID =60A; VDS =30V; VGS =10V;
see Figure 15 and 14 13.3 - nC
QGS(th) pre-threshold
gate-source charge =60A; VDS =30V; VGS =10V;
see Figure 14 - nC
QGS(th-pl) post-threshold
gate-source charge
-6.2 - nC
QGD gate-drain charge ID =60A; VDS =30V; VGS =10V;
see Figure 15 and 14
-7.7 - nC
VGS(pl) gate-source plateau
voltage
VDS =30V; see Figure 14 and 15 -5.2 - V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; Tj =25°C;
see Figure 16 2370 - pF
Coss output capacitance - 307 - pF
Crss reverse transfer
capacitance 172 - pF
td(on) turn-on delay time VDS =30V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω 18.4 - ns rise time - 13.7 - ns
td(off) turn-off delay time - 32.4 - ns
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj=25 °C; see Figure 17 -0.8 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V 43.3 - ns recovered charge - 61.4 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED