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PSMN6R5-80PS
N-channel 80V 6.9m鈩?standard level MOSFET in TO220
Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current rating is limited by package.
[2] Measured 3 mm from package.
PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
Rev. 02 — 1 November 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 80 V drain current Tmb =25°C; VGS =10V; see Figure 1
[1] --100 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --210 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =15A; =25 °C; see Figure 13
[2] -5.9 6.9 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A;
VDS=40 V; see Figure 14; see Figure 15
-16 - nC
QG(tot) total gate charge - 71 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; =49 A; Vsup≤80V;
RGS =50 Ω; unclamped
--700 mJ
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Pinning information Ordering information
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN6R5-80PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Limiting values[1] Continuous current rating is limited by package.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -82 A
VGS =10V; Tmb =25°C; see Figure 1 [1]- 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 470 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 210 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb=25°C - 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 470 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =49A;
Vsup≤80 V; RGS =50 Ω; unclamped 700 mJ
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 -0.4 0.7 K/W
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 µA; VGS =0V; Tj= -55°C 73 - - V= 250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =175 °C;
see Figure 10; see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10; see Figure 11
--4.6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
2.3 34V
IDSS drain leakage current VDS =80 V; VGS =0 V; Tj =25°C - 0.3 10 µA
VDS =80 V; VGS =0 V; Tj= 125°C - - 150 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20V; VDS =0 V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10V; ID =15A; Tj =100 °C;
see Figure 12
--11.5 mΩ
VGS =10V; ID =15A; Tj =175 °C;
see Figure 12 - 16.56 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13
[1] -5.9 6.9 mΩ internal gate resistance (AC) f=1 MHz - 0.75 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 61 - nC =25A; VDS =40 V; VGS =10V;
see Figure 14; see Figure 15
-71 - nC
QGS gate-source charge - 19 - nC
QGS(th) pre-threshold gate-source charge - 13.2 - nC
QGS(th-pl) post-threshold gate-source
charge
-5.8 -nC
QGD gate-drain charge - 16 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =40 V; see Figure 15 -4.3 -V
Ciss input capacitance VDS =40 V; VGS =0 V; f=1 MHz; =25°C; see Figure 16 4461 - pF
Coss output capacitance - 410 - pF
Crss reverse transfer capacitance - 214 - pF
td(on) turn-on delay time VDS =40 V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-26 - ns rise time - 24 - ns
td(off) turn-off delay time - 57 - ns fall time - 22 - ns
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj =25 °C;
see Figure 17 0.79 1.2 V
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220[1] Measured 3 mm from package.
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0V; VDS =40V
-48 - ns recovered charge - 82 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
