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PSMN5R6-100BS |PSMN5R6100BSNXP/PHN/a10000avaiN-channel 100 V 5.6 m惟 standard level MOSFET in D2PAK


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PSMN5R6-100BS
N-channel 100 V 5.6 m惟 standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
[1] Continuous current limited by package.
PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V; see Figure 1
[1] - - 100 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - - 306 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =100 °C;
see Figure 12; see Figure 13
-8.5 10 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13 4.72 5.6 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =50V; see Figure 14; see Figure 15 -43 -nC
QG(tot) total gate charge - 141 - nC
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25 °C; ID =100 A; Vsup≤ 100V;
RGS =50 Ω; unclamped - 468 mJ
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2 Ordering information Marking
Table 2. Pinning information
Table 3. Ordering information
PSMN5R6-100BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Marking codes
PSMN5R6-100BS PSMN5R6-100BS
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Limiting values
[1] Continuous current limited by package.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tj= 100 °C; see Figure 1 -95 A
VGS =10V; Tmb =25°C; see Figure 1 [1] - 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 539 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1] - 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 539 A
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID= 100A;
Vsup≤ 100 V; RGS =50 Ω; unclamped 468 mJ
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 6. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.3 0.49 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK CharacteristicsTable 7. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj=25°C 100 - - V =250 µA; VGS =0V; Tj= -55°C 90 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V
IDSS drain leakage current VDS =100 V; VGS =0 V; Tj=25°C - 0.02 10 µA
VDS =100 V; VGS =0 V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10 V; ID =25A; Tj= 100 °C;
see Figure 12; see Figure 13
-8.5 10 mΩ
VGS =10 V; ID =25A; Tj= 175 °C;
see Figure 12; see Figure 13 13.22 15.5 mΩ
VGS =10 V; ID =25A; Tj =25°C;
see Figure 13 4.72 5.6 mΩ gate resistance f=1 MHz - 0.97 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15 141 - nC =0A; VDS =0V; VGS=10V - 130 - nC
QGS gate-source charge ID =25A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-36 -nC
QGS(th) pre-threshold gate-source
charge
-22 -nC
QGS(th-pl) post-threshold gate-source
charge
-14 -nC
QGD gate-drain charge - 43 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =50V;
see Figure 14; see Figure 15
-4.9 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 8061 - pF
Coss output capacitance - 561 - pF
Crss reverse transfer capacitance - 330 - pF
td(on) turn-on delay time VDS =50V; RL =0.6 Ω; VGS =10V;
RG(ext) =1.5Ω
-31 -ns rise time - 46 - ns
td(off) turn-off delay time - 83 - ns fall time - 34 - ns
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C;
see Figure 17 0.79 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0 V; VDS =50V
-67 -ns recovered charge - 182 - nC
Table 7. Characteristics …continued
NXP Semiconductors PSMN5R6-100BS
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK
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