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PSMN4R6-60PS |PSMN4R660PSNXP/PHN/a10000avaiN-channel 60 V, 4.6 m惟 standard level MOSFET in TO220


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PSMN4R6-60PS
N-channel 60 V, 4.6 m惟 standard level MOSFET in TO220
Product profile1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
PSMN4R6-60PS
N-channel 60 V , 4.6 mΩ standard level MOSFET in TO220
Rev. 3 — 18 April 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --60 V drain current Tmb =25°C; see Figure 1 [1]- - 100 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --211 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj= 175 °C;see Figure 12 - 8.05 10.6 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13
-3.5 4.6 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =30V;
see Figure 14; see Figure 15 14.8 - nC
QG(tot) total gate charge - 70.8 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤60 V; RGS =50 Ω; unclamped - 266 mJ
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Pinning information Ordering information Marking
Table 2. Pinning information
Table 3. Ordering information
PSMN4R6-60PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Marking codes
PSMN4R6-60PS PSMN4R6-60PS
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Limiting values
[1] Continuous current is limited by package.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current Tmb= 100 °C; see Figure 1 [1]- 99.7 A
Tmb =25°C; see Figure 1 [1]- 100 A
IDM peak drain current pulsed; tp =10µs; Tmb =25°C;
see Figure 3 565 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -211 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1]- 100 A
ISM peak source current pulsed; tp =10µs; Tmb=25°C - 565 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID= 100A;
Vsup≤60 V; RGS =50 Ω; unclamped 266 mJ
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Thermal characteristics
Table 6. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.38 0.71 K/W
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 CharacteristicsTable 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj= -55°C 54 - - V =250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold
voltage =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60V; VGS =0V; Tj= 125°C - - 200 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12 8.05 10.6 mΩ
VGS =10V; ID =25A; Tj= 100 °C;
see Figure 12
--7.4 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13
-3.5 4.6 mΩ gate resistance f=1 MHz - 0.79 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V;
see Figure 14
-63 -nC =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 70.8 - nC
QGS gate-source charge - 19.5 - nC
QGS(th) pre-threshold
gate-source charge =25A; VDS =30V; VGS =10V;
see Figure 14 13.5 - nC
QGS(th-pl) post-threshold
gate-source charge -nC
QGD gate-drain charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 14.8 - nC
VGS(pl) gate-source plateau
voltage
VDS =30V; see Figure 14;
see Figure 15
-4.3 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 4426 - pF
Coss output capacitance - 567 - pF
Crss reverse transfer
capacitance 293 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-26 -ns rise time - 24 - ns
td(off) turn-off delay time - 58 - ns fall time - 22 - ns
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.81 1.1 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V
-45 -ns recovered charge - 64 - nC
Table 7. Characteristics …continued
NXP Semiconductors PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
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