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PSMN3R4-30PL |PSMN3R430PLNXP/PHN/a10000avaiN-channel 30 V 3.4 m鈩?logic level MOSFET


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PSMN3R4-30PL
N-channel 30 V 3.4 m鈩?logic level MOSFET
Product profile1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for logic level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
Rev. 01 — 2 November 2010 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --30 V drain current Tmb =25°C; VGS =10V; see Figure 1
[1] --100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --114 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =10A; =25°C; see Figure 13
-3.5 4.1 mΩ
VGS =10V; ID =10A; Tj =25°C; see Figure 13
[2] -2.8 3.4 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =4.5 V; ID =25A;
VDS =15 V; see Figure 14;
see Figure 15 -nC
QG(tot) total gate charge - 31 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100 A; Vsup≤30V;
RGS =50 Ω; unclamped
--200 mJ
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
[1] Continuous current is limited by package.
[2] Measured 3 mm from package. Pinning information Ordering information
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering information
PSMN3R4-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET Limiting values
[1] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 [1]- 100 A
VGS =10V; Tmb =25°C; see Figure 1 [1]- 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 609 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -114 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1]- 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 609 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤30 V; RGS =50 Ω; unclamped 200 mJ
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 -0.65 1 K/W
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET CharacteristicsTable 6. Characteristics
Tested to JEDEC standards where applicable.
Static characteristics
V(BR)DSS drain-source breakdown voltageID= 250 µA; VGS =0 V; Tj=25°C 30 --V= 250 µA; VGS =0 V; Tj= -55°C 27 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
1.3 1.7 2.15 V =1mA; VDS =VGS; Tj =175 °C;
see Figure 11
0.5 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--2.45 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C - 0.3 5 µA
VDS =30V; VGS =0V; Tj= 125°C - - 100 µA
IGSS gate leakage current VGS =16V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-16 V; VDS =0 V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10V; ID =10A; Tj =175 °C;
see Figure 12
--6.46 mΩ
VGS= 4.5 V; ID =10A; Tj =25°C;
see Figure 13
-3.5 4.1 mΩ
VGS =10V; ID =10A; Tj =100 °C;
see Figure 12
--6.1 mΩ
VGS= 4.5 V; ID =10A; Tj= 175 °C;
see Figure 12
--7.79 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13
[1] -2.8 3.4 mΩ gate resistance f=1 MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =15V; VGS =10V;
see Figure 14; see Figure 15
-64 - nC =0A; VDS =0V; VGS =10V - 58 - nC =25A; VDS =15V; VGS =4.5V;
see Figure 14; see Figure 15
-31 - nC
QGS gate-source charge - 12 - nC
QGS(th) pre-threshold gate-source
charge
-6.2 -nC
QGS(th-pl) post-threshold gate-source
charge
-5.8 -nC
QGD gate-drain charge - 8 - nC
VGS(pl) gate-source plateau voltage VDS=15 V; see Figure 14;
see Figure 15
-2.8 -V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25 °C; see Figure 16 3907 - pF
Coss output capacitance - 822 - pF
Crss reverse transfer capacitance - 356 - pF
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
[1] Measured 3 mm from package.
td(on) turn-on delay time VDS =12V; RL =0.5 Ω;
VGS= 4.5 V; RG(ext) =4.7Ω
-40 - ns rise time - 73 - ns
td(off) turn-off delay time - 59 - ns fall time - 28 - ns
Source-drain diode
VSD source-drain voltage IS =10A; VGS =0V; Tj =25°C;
see Figure 17
-0.7 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0V; VDS =12V
-36 - ns recovered charge - 28 - nC
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
NXP Semiconductors PSMN3R4-30PL
N-channel 30 V 3.4 mΩ logic level MOSFET
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