PSMN3R4-30BLE Fast Delivery |IC PHOENIX CO.,LIMITED

PSMN3R4-30BLE ,N-channel 30 V 3.4 m鈩?logic level MOSFET in D2PAKApplications• Electronic fuseHot swap•• Load switchSoft start•1.4 Quick reference dataTable 1. Quic ..
PSMN3R4-30PL ,N-channel 30 V 3.4 m鈩?logic level MOSFETApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN3R5-80ES ,N-channel 80 V, 3.5 m鈩?standard level MOSFET in I2PAKApplications DC-to-DC converters Motor control Load switch Server power supplies1.4 Quick refer ..
PSMN3R5-80PS ,N-channel 80 V, 3.5 m鈩?standard level MOSFET in TO-220Applications DC-to-DC converters Motor control Load switch Server power supplies1.4 Quick refer ..
PSMN3R8-100BS ,N-channel 100 V 3.9 m惟 standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN3R8-30LL ,N-channel DFN3333-8 30 V 3.7 m鈩?logic level MOSFETApplications Battery protection Load switching DC-to-DC converters Power ORing1.4 Quick referen ..
QL4058-1PQ208C , 58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL63D5SA , InGaAlP Laser Diode
QLX4600SIQT7 , Quad Lane Extender
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM20TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE

PSMN3R4-30BLE
N-channel 30 V 3.4 m鈩?logic level MOSFET in D2PAK
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK12 October 2012 Product data sheet Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.
1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation• Very low Rdson for low conduction losses
1.3 Applications Electronic fuse• Hot swap• Load switch• Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 178 W
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12 2.95 3.4 mΩRDSon drain-source on-stateresistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12 4.25 5 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15 12.2 - nC
QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 15 V; 81 - nC
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3 - 246 mJ
[1] Capped at 120A due to package Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain[1] S source D mounting base; connected todrain 3
D2PAK (SOT404)
mbb076
[1] It is not possible to make connection to pin 2. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN3R4-30BLE D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads(one lead cropped) SOT404 Marking
Table 4. Marking codes
Type number Marking code
PSMN3R4-30BLE PSMN3R4-30BLE Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 30 V
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 119 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 672 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 178 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 672 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3 246 mJ
[1] Capped at 120A due to package
003aaj362
200D(A)
(1)
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as afunction of mounting base temperature
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
003aaj89723-3 10-2 10-1 1 10tAL(ms)AL(A)
(1)
(2)
003aaj36323-1 1 10 102VDS(V)D(A)
Limit RDSon= VDS/ID
100µsmsp=10µs
100msms
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Max Unit 0.84 K/W - K/W
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
003aaj364
single shot
0.05-3-2-1-6 10-5 10-4 10-3 10-2 10-1 1tp(s)
Zth(j-mb)(K/W) δ=0.5
0.02δ =
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
1.3 1.7 2.15 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 2.45 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.2 5 µAIDSS drain leakage current - - 100 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA 3.4 mΩ 5.1 mΩ 5 mΩ 6.5 mΩ
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit internal gateresistance (AC) f = 1 MHz 0.5 1 2 Ω
Dynamic characteristics
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15 81 - nC
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 37 - nC
QG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 79 - nC
QGS gate-source charge - 13.9 - nC
QGS(th) pre-threshold gate-source charge - 7.5 - nC
QGS(th-pl) post-threshold gate-source charge - 6.4 - nC
QGD gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 12.2 - nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 - 3.2 - V
Ciss input capacitance - 4682 - pF
Coss output capacitance - 909 - pF
Crss reverse transfer
capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 438 - pF
td(on) turn-on delay time - 35.7 - ns rise time - 101 - ns
td(off) turn-off delay time - 49 - ns fall time
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 51.2 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V
trr reverse recovery time - 37 - ns recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 15 V - 38 - nC
NXP Semiconductors PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
003aaj365
100 0.5 1 1.5 2VDS(V)D(A)
VGS(V)=4.510
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aaj366 4 8 12 16VGS(V)
RDSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj367
120 20 40 60 80 100ID(A)
gfs(S)
Fig. 8. Forward transconductance as a function ofdrain current; typical values
003aaj368
120 1 2 3 4VGS(V)D(A)j=25°Cj=175°C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN3R4-30BLE \|PSMN3R430BLE	NXP/PH	N/a	10000	avai	N-channel 30 V 3.4 m鈩?logic level MOSFET in D2PAK