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PSMN3R0-60ES
N-channel 60 V 3.0 m惟 standard level MOSFET in I2PAK.
Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package.
PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK.
Rev. 01 — 24 February 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --60 V drain current Tmb =25°C; VGS =10V;
see Figure 1
[1] --100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --306 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj =25°C; see Figure 11;
see Figure 12
-2.4 3 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =80A;
VDS =12 V; see Figure 13;see Figure 14
-28 -nC
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. Pinning information Ordering information
Table 2. Pinning information
Table 3. Ordering informationPSMN3R0-60ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. Limiting values[1] Continuous current is limited by package.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 - 83.4 A
VGS =10V; Tmb =25°C; see Figure 1 [1]- 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 824 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1]- 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 824 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID= 100A;
Vsup≤60 V; RGS =50 Ω; unclamped 800 mJ
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.3 0.49 K/W
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj= -55°C 54 - - V =250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 8; see Figure 9
234V
VGSth gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 9 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 9
--4.6 V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 10
--7.2 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 11; see Figure 12
-2.4 3 mΩ gate resistance f=1 MHz - 1.1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =80A; VDS =12V; VGS =10V;
see Figure 13; see Figure 14 130 - nC
QGS gate-source charge ID =80A; VDS =12V; VGS =10V;
see Figure 14; see Figure 13
-43 -nC
QGD gate-drain charge ID =80A; VDS =12V; VGS =10V;
see Figure 13; see Figure 14
-28 -nC
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 15; see Figure 16 8079 - pF
Coss output capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 15 971 - pF
Crss reverse transfer
capacitance
VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 15; see Figure 16 492 - pF
td(on) turn-on delay time VDS =30V; RL =0.5 Ω; VGS =10V;
RG(ext) =1.5Ω
-31 -ns rise time - 26 - ns
td(off) turn-off delay time - 77 - ns fall time - 22 - ns
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.88 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V
-54 -ns recovered charge - 97 - nC
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK.
NXP Semiconductors PSMN3R0-60ES
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK.
