IC Phoenix
 
Home ›  P › P32 > PSMN3R0-60BS,N-channel 60 V 3.2 m惟 standard level MOSFET in D2PAK
PSMN3R0-60BS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
PSMN3R0-60BS |PSMN3R060BSNXP/PHN/a10000avaiN-channel 60 V 3.2 m惟 standard level MOSFET in D2PAK


PSMN3R0-60BS ,N-channel 60 V 3.2 m惟 standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN3R0-60ES ,N-channel 60 V 3.0 m惟 standard level MOSFET in I2PAK.Applications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN3R0-60PS ,N-channel 60 V 3.0 m惟 standard level MOSFETApplications„ DC-to-DC converters„ Motor control„ Load switching„ Server power supplies1.4 Quick re ..
PSMN3R3-80BS ,N-channel 80 V, 3.5 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switch Server power supplies1.4 Quick refer ..
PSMN3R3-80ES ,N-channel 80 V, 3.3 m鈩?standard level MOSFET in I2PAKApplications DC-to-DC converters Motor control Load switch Server power supplies1.4 Quick refer ..
PSMN3R3-80PS ,N-channel 80 V, 3.3 m鈩?standard level MOSFET in TO-220Applications DC-to-DC converters Motor control Load switch Server power supplies1.4 Quick refer ..
QL4058-1PQ208C , 58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL63D5SA , InGaAlP Laser Diode
QLX4600SIQT7 , Quad Lane Extender
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE
QM20TG-9B , MEDIUM POWER SWITCHING USE INSULATED TYPE

PSMN3R0-60BS
N-channel 60 V 3.2 m惟 standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package
PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --60 V drain current Tmb =25 °C; VGS =10V; see Figure 1
[1] - - 100 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - - 306 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj =100 °C;
see Figure 12; see Figure 13 4.32 5.1 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13
-2.7 3.2 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =30V; see Figure 14; see Figure 15 -28 -nC
QG(tot) total gate charge - 130 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25 °C; ID =100 A; Vsup≤60 V; RGS =50Ω;
unclamped - 800 mJ
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2 Ordering information Marking
Table 2. Pinning information
Table 3. Ordering information
PSMN3R0-60BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Marking codes
PSMN3R0-60BS PSMN3R0-60BS
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK Limiting values
[1] Continuous current is limited by package
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 [1] - 83.4 A
VGS =10V; Tmb =25°C; see Figure 1 [1] - 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 824 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1] - 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 824 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID= 100A;
Vsup≤60 V; RGS =50 Ω; unclamped 800 mJ
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 6. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.3 0.49 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted in a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK CharacteristicsTable 7. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 250 µA; VGS =0 V; Tj= -55°C 54 --V= 250 µA; VGS =0 V; Tj=25°C 60 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj =175 °C;
see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =-20 V; VDS =0 V; Tj=25°C - 10 100 nA
VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj =100 °C;
see Figure 12; see Figure 13 4.32 5.1 mΩ
VGS =10V; ID =25A; Tj =175 °C;
see Figure 12; see Figure 13 6.21 7.3 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13
-2.7 3.2 mΩ gate resistance f=1 MHz - 1.1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS=10V -110 -nC =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 130 - nC
QGS gate-source charge - 43 - nC
QGS(th-pl) post-threshold gate-source
charge
-21 -nC
QGD gate-drain charge - 28 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =30V; see Figure 14;
see Figure 15
-5.2 -V
Ciss input capacitance VDS =30V; VGS =0V; f= 1MHz; =25 °C; see Figure 16; see Figure 9 8079 - pF
Coss output capacitance VDS =30V; VGS =0V; f= 1MHz; =25 °C; see Figure 16 971 - pF
Crss reverse transfer capacitance VDS =30V; VGS =0V; f= 1MHz; =25 °C; see Figure 16; see Figure 9 492 - pF
td(on) turn-on delay time VDS =30V; RL =0.5 Ω; VGS =10V;
RG(ext) =1.5Ω
-31 -ns rise time - 26 - ns
td(off) turn-off delay time - 77 - ns fall time - 22 - ns
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.88 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0V; VDS =30V
-54 -ns recovered charge - 97 - nC
Table 7. Characteristics …continued
NXP Semiconductors PSMN3R0-60BS
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED