PSMN2R8-40PS Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN2R8-40PS
N-channel TO220 40 V 2.8 m鈩?standard level MOSFET
TO-220AB PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET11 February 2013 Product data sheet General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for standard level gate drive sources Applications DC-to-DC converters• Load switching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 211 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 12; Fig. 13 - 4.5 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
[2] - 2.3 2.8 mΩ
Dynamic characteristics
QGD gate-drain charge - 17 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 25 A; VDS = 20 V;
Fig. 14; Fig. 15 - 71 - nC
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω - 407 mJ
[1] Continuous current rating is limited by package.[2] Measured 3 mm from package. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain D mounting base; connected todrain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN2R8-40PS TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN2R8-40PS PSMN2R8-40PS
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 40 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 100 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 100 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 797 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 211 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb = 25 °C - 100 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 797 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω 407 mJ
[1] Continuous current rating is limited by package.
003aad361
(A)
Tmb(°C) 200150 100
03aa16
Pder(%)
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aad385-123-1 1 10 102VDS(V)
(A)
100ms10msms
100µs
Limit RDSon= VDS/ID
(1)=10µs
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 4 - 0.4 0.7 K/W
003aad247-2-1 10
Zth(j-mb)(K/W)
0.20.5
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
10. Characteristics
Table 7. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11 - 4.6 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11 - - V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
2.3 3 4 V
VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.3 10 µAIDSS drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 125 °C - - 150 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 12; Fig. 13 - 4.5 mΩ
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 12; Fig. 13 - 5.6 mΩ
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
[1] - 2.3 2.8 mΩ internal gateresistance (AC) f = 1 MHz - 0.7 - Ω
Dynamic characteristics
ID = 0 A; VDS = 0 V; VGS = 10 V - 61 - nCQG(tot) total gate charge 71 - nC
QGS gate-source charge - 21 - nC
QGS(th) pre-threshold gate-
source charge 13 - nC
QGS(th-pl) post-threshold gate-
source charge 8.5 - nC
QGD gate-drain charge
ID = 25 A; VDS = 20 V; VGS = 10 V;
Fig. 14; Fig. 15 17 - nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 20 V; Fig. 14; Fig. 15 - 4.7 - V
Ciss input capacitance - 4491 - pF
Coss output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 - 937 - pF
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol Parameter Conditions Min Typ Max Unit
Crss reverse transfercapacitance - 464 - pF
td(on) turn-on delay time - 28 - ns rise time - 29 - ns
td(off) turn-off delay time - 52 - ns fall time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω 23 - ns
Source-drain diode
VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V
trr reverse recovery time IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V 47 - ns recovered charge IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C 61 - nC
[1] Measured 3 mm from package.
003aad431
120 0.3 0.6 0.9 1.2VDS(V)
(A)
6.56 5.5
VGS(V)=4.5
Fig. 5. Output characteristics: drain current as a function of drain-source voltage; typical values
003aad433
100 2 4 6VGS(V)
(A)=175°C=25°C
Fig. 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values
NXP Semiconductors PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aad437
7000 3 6 9 12VGS(V)(pF) Ciss
Crss
Fig. 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad438
125 25 50 75 100ID(A)
gfs
(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values
003aad439 8 12 16 20VGS(V)
RDSon
(mΩ)
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
Tj(°C)-60 1801200 60
003aae992
VGS(th)(V)
max
typ
min
Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
PSMN2R8-40PS \|PSMN2R840PS	NXP/PH	N/a	10000	avai	N-channel TO220 40 V 2.8 m鈩?standard level MOSFET