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PSMN1R6-30PL
N-channel 30 V 1.7 m鈩?logic level MOSFET
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
Rev. 02 — 25 June 2009 Product data sheet Product profile
1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for logic level gate drive
sources
1.3 Applications DC-to-DC converters Load switiching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 30 V drain current Tmb =25°C; VGS =10V;
see Figure 1;
[1] - - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 306 W
Dynamic characteristicsQGD gate-drain charge VGS= 4.5 V; ID =25A;
VDS=15 V; see Figure 14;
see Figure 15
-27 - nC
QG(tot) total gate charge VGS= 4.5 V; ID =25A;
VDS=15 V; see Figure 14 101 - nC
Static characteristicsRDSon drain-source
on-state resistance
VGS =10V; ID =25A; =25°C;
[2] -1.4 1.7 mΩ
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET Pinning information Ordering information
Table 2. Pinning information gate
SOT78
(TO-220AB; SC-46) drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN1R6-30PL TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET Limiting values[1] Continuous current is limited by package.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1; [1] -100 A
VGS =10V; Tmb =25°C; see Figure 1; [1] -100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -1268 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C; [1] -100 A
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - 1268 A
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =100 A; Vsup≤30V;
RGS =50 Ω; unclamped
-1.7 J
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - 0.22 0.49 K/W
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =25°C 30 - - V =250 µA; VGS =0V; Tj =-55°C 27 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C; see
Figure 11; see Figure 12
1.3 1.7 2.15 V =1mA; VDS = VGS; Tj= 175 °C; see
Figure 12
0.5 - - V =1mA; VDS = VGS; Tj =-55 °C; see
Figure 12
--2.45 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --5 µA
VDS =30V; VGS =0V; Tj= 125°C - - 150 µA
IGSS gate leakage current VGS =16V; VDS =0V; Tj=25°C - - 100 nA
VGS =-16 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =25A; Tj =25°C - 1.6 2.1 mΩ
VGS =10V; ID =25A; Tj= 100 °C; see
Figure 13
--2.3 mΩ
VGS =10V; ID =25A; Tj =25°C; [1] -1.4 1.7 mΩ gate resistance f=1 MHz - 0.98 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =15V; VGS =10V; see
Figure 14; see Figure 15 212 - nC =0A; VDS =0V; VGS=10V - 193 - nC =25A; VDS =15V; VGS= 4.5 V; see
Figure 14 101 - nC
QGS gate-source charge ID =25A; VDS =15V; VGS= 4.5 V; see
Figure 14; see Figure 15
-33 - nC
QGS(th) pre-threshold
gate-source charge =25A; VDS =15V; VGS= 4.5 V; see
Figure 14
-20 - nC
QGS(th-pl) post-threshold
gate-source charge
-13 - nC
QGD gate-drain charge ID =25A; VDS =15V; VGS= 4.5 V; see
Figure 14; see Figure 15
-27 - nC
VGS(pl) gate-source plateau
voltage
VDS =15V; see Figure 14 -2.5 - V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 12493- pF
Coss output capacitance - 2486 - pF
Crss reverse transfer
capacitance 1034 - pF
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET[1] Measured 3 mm from package.
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =4.5V;
RG(ext) =4.7Ω 104 - ns rise time - 163 - ns
td(off) turn-off delay time - 174 - ns fall time - 87 - ns
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C; see
Figure 17 0.77 1.2 V
trr reverse recovery time IS =50A; dIS/dt= -100 A/µs; VGS =0V;
VDS =15V
-64 - ns recovered charge - 79 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
