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PSMN1R5-40ES
N-channel 40 V 1.6 m鈩?standard level MOSFET in I2PAK.
Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package
[2] Measured 3 mm from package.
PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Rev. 01 — 19 April 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --40 V drain current Tmb =25°C; VGS =10V; see Figure 1
[1] --120 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --338 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25 °C; see Figure 13
[2] -1.3 1.6 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =75A;
VDS =20V; see Figure 14; see Figure 15
-32 - nC
QG(tot) total gate charge - 136- nC
NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. Pinning information Ordering information Limiting values[1] Continuous current is limited by package.
Table 2. Pinning information G gate
SOT226 (I2PAK) D drain source D drain
Table 3. Ordering informationPSMN1R5-40ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 40 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -40 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100°C [1]- 120 A
VGS =10V; Tmb=25 °C; see Figure 1 [1]- 120 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 - 1301 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - 338 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1]- 120 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 1301 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25 °C; ID= 120A;
Vsup≤40 V; unclamped; RGS =50 Ω; =0.1ms
-1.4 J
NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.22 0.44 K/W
Rth(j-a) thermal resistance from junction to
ambient
Vertical in free air - 60 - K/W
NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 µA; VGS =0V; Tj= -55°C 36 - - V= 250 µA; VGS =0V; Tj=25°C 40 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.6 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 10
234V
IDSS drain leakage current VDS =40V; VGS =0V; Tj=25°C - 0.02 10 µA
VDS =40V; VGS =0V; Tj= 175°C - 250 500 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25 A; Tj= 100 °C;
see Figure 12
-1.9 2.3 mΩ
VGS =10V; ID =25 A; Tj= 175 °C;
see Figure 12
-2.6 3.2 mΩ
VGS =10V; ID =25 A; Tj =25°C;
see Figure 13
[1] -1.3 1.6 mΩ internal gate resistance (AC) f=1 MHz - 1.1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V;
see Figure 14; see Figure 15 133 - nC =75 A; VDS =20V; VGS =10V;
see Figure 14; see Figure 15 136 - nC
QGS gate-source charge - 52 - nC
QGS(th) pre-threshold gate-source
charge
-30 - nC
QGS(th-pl) post-threshold gate-source
charge
-22 - nC
QGD gate-drain charge - 32 - nC
VGS(pl) gate-source plateau voltage VDS =20V; see Figure 14;
see Figure 15
-6.1 -V
Ciss input capacitance VDS =20V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 9710 - pF
Coss output capacitance - 2042 - pF
Crss reverse transfer capacitance - 994 - pF
td(on) turn-on delay time VDS =20V; RL =0.8 Ω; VGS =10V;
RG(ext) =4.7Ω
-45 - ns rise time - 66 - ns
td(off) turn-off delay time - 111 - ns fall time - 53 - ns
NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.[1] Measured 3 mm from package.
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0V; VDS =20V
-64 - ns recovered charge IS =25A; dIS/dt= -100 A/µs;
VGS =0V; VDS =20V; Tj =25°C
-117 -nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
