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PSMN130-200D
N-channel TrenchMOS(tm) transistor
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PSMlNH30=200D
transistor
N-channel TrenchMOS(TM)
Product specification
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August 1999
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Philips Semiconductors Product specification
Siliconlh ' Id
N-channel TrenchMOS(TM) transistor PSMN130-200D
FEATURES SYMBOL QUICK REFERENCE DATA
. Trench' technology d
I Very low on-state resistance Voss = 200 V
. Fast switching
. Low thermal resistance ID = 20 A
GENERAL DESCRIPTION PINNING SOT428 (DPAK)
SiliconMAX products use the latest PIN DESCRIPTION tab
Philips Trench technology to H
achieve the lowest possible 1 gate
on-state resistance in each
package at each voltage rating. 2 drain1
. d.c. to do converters
Applications:- 3 source H
. switched mode power supplies tab drain 1
The PSMN130-200D is supplied in
the SOT428 (Dpak) surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Voss Drain-source voltage T]. = 25 ( to 175°C - 200 V
VDGR Drain-gate voltage T, = 25 T to 175°C; Rss = 20 kn - 200 V
I/ss Gate-source voltage - i 20 V
lr, Continuous drain current Tmb = 25 "C; I/ss = 10 V - 20 A
Tmb=100°C;VGS=10V - 14 A
IDM Pulsed drain current Tmb = 25 T - 80 A
Pr, Total power dissipation Tmr, = 25 T - 150 W
I, Tstg Operating junction and - 55 175 T
storage temperature
1 It is not possible to make connection to pin 2 of the SOT428 package.
August 1999 2 Rev 1.000
