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PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Higher operating power due to low
thermal resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications Class D amplifier DC-to-DC converters Motion control Switched-mode power supplies
1.4 Quick reference data
PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 03 — 16 March 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source
voltage≥25 °C; Tj≤ 150°C - - 200 V drain current Tmb =25°C; VGS =10V;
see Figure 1; see Figure 3
--21.5 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --113 W
Static characteristicsRDSon drain-source
on-state
resistance
VGS =10V; ID =12A; =25°C; see Figure 9;
see Figure 10
-86 102 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =12A;
VDS= 100 V; see Figure 11;
see Figure 12
-10.1 -nC
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN102-200Y LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 200 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 150 °C; RGS =20kΩ - 200 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =25°C; see Figure 1;
see Figure 3 21.5 A
VGS =10V; Tmb= 100 °C; see Figure 1 - 13.6 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3
-65 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -113 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tmb =25°C - 52 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 208 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID= 10.8A;
Vsup≤ 200 V; unclamped; tp= 0.14 ms;
RGS =50Ω 202 mJ
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting base
Mounted on a printed-circuit board;
vertical in still air; see Figure 4
--1.1 K/W
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj=25°C 200 - - V =250 µA; VGS =0V; Tj= -55°C 178 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 7; see Figure 8
234V =1mA; VDS =VGS; Tj= 150 °C;
see Figure 7; see Figure 8 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 7; see Figure 8
--4.4 V
IDSS drain leakage current VDS =160 V; VGS =0V; Tj=25°C --1 µA
VDS =160 V; VGS =0V; Tj= 150°C - - 100 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=20°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=20°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =12A; Tj =25°C;
see Figure 9; see Figure 10 86 102 mΩ
VGS =10V; ID =12A; Tj= 150 °C;
see Figure 9; see Figure 10 206 245 mΩ gate resistance f=1 MHz - 1.1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =12A; VDS =100 V; VGS =10V;
see Figure 11; see Figure 12 30.7 - nC
QGS gate-source charge - 6.3 - nC
QGD gate-drain charge - 10.1 - nC
VGS(pl) gate-source plateau
voltage =12A; VDS= 100 V; see Figure 11;
see Figure 12
-4.6 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 13 1568 - pF
Coss output capacitance - 170 - pF
Crss reverse transfer
capacitance
-55 -pF
td(on) turn-on delay time VDS =100 V; RL =5.8 Ω; VGS =10V;
RG(ext) =5.6Ω 14.2 - ns rise time - 29.5 - ns
td(off) turn-off delay time - 33 - ns fall time - 28 - ns
Source-drain diodeVSD source-drain voltage IS =12A; VGS =0V; Tj =25°C;
see Figure 14
-0.9 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V 143 - ns recovered charge IS =20A; dIS/dt= -100 A/µs; VGS=0V - 268 - nC
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
