PSMN059-150Y Fast Delivery |IC PHOENIX CO.,LIMITED

PSMN059-150Y ,N-channel TrenchMOS SiliconMAX standard level FETApplicationsClass D amplifier•• DC-to-DC convertersMotion control•• Switched-mode power supplies4. ..
PSMN063-150D ,N-channel enhancement mode field-effect transistorApplications■ DC to DC converters ■ Switched mode power supplies1.4 Quick reference data■ V = 150 V ..
PSMN063-150D ,N-channel enhancement mode field-effect transistorPSMN063-150DN-channel enhancement mode ﬁeld-effect transistorRev. 03 — 31 October 2001 Product data ..
PSMN063-150D ,N-channel enhancement mode field-effect transistor
PSMN070-200B ,N-channel TrenchMOS(tm) transistor
PSMN070-200B ,N-channel TrenchMOS(tm) transistor
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100I , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM

PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
FPAK6 PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FET3 October 2013 Product data sheet General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) ina plastic package using TrenchMOS technology. This product is designed and qualifiedfor use in computing, communications, consumer and industrial applications only. Features and benefits Higher operating power due to low thermal resistance• Suitable for high frequency applications due to fast switching characteristics Applications Class D amplifier• DC-to-DC converters• Motion control• Switched-mode power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 150 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 - - 43 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 113 W
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 12 A; Tj = 25 °C;
Fig. 9; Fig. 10 46 59 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 12 A; VDS = 75 V;
Fig. 11; Fig. 12 9.1 - nC
NXP Semiconductors PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol S source S source S source G gate D mounting base; connected todrain234
LFPAK56; Power-SO8 (SOT669)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN059-150Y LFPAK56;Power-SO8 Plastic single-ended surface-mounted package (LFPAK56;Power-SO8); 4 leads SOT669 Marking
Table 4. Marking codes
Type number Marking code
PSMN059-150Y 059150 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 150 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 Ω - 150 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 - 43 AID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 27.7 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 129 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 113 W
Tstg storage temperature -55 150 °C
NXP Semiconductors PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Source-drain diode source current Tmb = 25 °C - 52 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 208 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-sourceavalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 12.1 A;
Vsup ≤ 150 V; unclamped; tp = 0.21 ms;
RGS = 50 Ω 255 mJ
Tmb (°C)0 20015050 100
003aac023
Ider(%)
Fig. 1. Normalized continuous drain current as a
function of mounting base temperature
Tmb(°C)0 20015050 100
003aab937
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of solder point temperature
NXP Semiconductors PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
003aab749
103(A)
VDS(V)1 10310210
Limit RDSon =VDS/ID= 10µs
100µs1msms100ms
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction to
mounting base
mounted on a printed-circuit board;vertical in still air; Fig. 4 - - 1.1 K/W
003aac268
Zth(j-mb)(K/W) 1=0.5
0.02
NXP Semiconductors PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 150 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 133 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 7; Fig. 8 3 4 V
ID = 1 mA; VDS = VGS; Tj = 150 °C;
Fig. 7; Fig. 8 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 7; Fig. 8 - 4.4 V
VDS = 120 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 120 V; VGS = 0 V; Tj = 150 °C - - 100 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 10 V; ID = 12 A; Tj = 25 °C;
Fig. 9; Fig. 10 46 59 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 12 A; Tj = 150 °C;
Fig. 9; Fig. 10 101 135 mΩ gate resistance f = 1 MHz - 1.1 - Ω
Dynamic characteristics
QG(tot) total gate charge - 27.9 - nC
QGS gate-source charge - 6.3 - nC
QGD gate-drain charge
ID = 12 A; VDS = 75 V; VGS = 10 V;
Fig. 11; Fig. 12 9.1 - nC
VGS(pl) gate-source plateauvoltage ID = 12 A; VDS = 75 V; Fig. 11; Fig. 12 - 4.8 - V
Ciss input capacitance - 1529 - pF
Coss output capacitance - 208 - pF
Crss reverse transfercapacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 13 66 - pF
td(on) turn-on delay time - 14.2 - ns rise time - 42 - ns
td(off) turn-off delay time - 54.2 - ns fall time
VDS = 75 V; RL = 3 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω 11.1 - ns
Source-drain diode
VSD source-drain voltage IS = 12 A; VGS = 0 V; Tj = 25 °C; Fig. 14 - 0.9 1.2 V
NXP Semiconductors PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
Symbol Parameter Conditions Min Typ Max Unit
trr reverse recovery time IS = 12 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V 67 - ns recovered charge IS = 12 A; dIS/dt = -100 A/µs; VGS = 0 V - 226 - nC
VDS(V)0 542 31
003aab751(A) 7 6
VGS(V)=5.5
Tj = 25 °C
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
VGS(V)0 862 4
003aab753(A)
VDS>ID× RDSon=150°C 25°C
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig. 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values
003aab852
VGS(th)(V)
max
typ
min
003aab853
VGS(V)0 642
10-1(A)
min typ max
Fig. 8. Sub-threshold drain current as a function ofgate-source voltage

Partno	Mfg	Dc	Qty	Available	Descript
PSMN059-150Y \|PSMN059150Y	NXP	N/a	49500	avai	N-channel TrenchMOS SiliconMAX standard level FET