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PSMN050-80PS
N-channel 80 V 46 m鈩?standard level MOSFET
Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Measured 3 mm from package.
PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
Rev. 2 — 28 November 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25°C; VGS=10 V; see Figure 1 --22 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --56 W
Static characteristicsRDSon drain-source on-state resistance VGS =10V; ID =10A; Tj =25°C [1]- 3746mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =40V; see Figure 14; see Figure 15 -2.3 -nC
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN050-80PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100 °C; see Figure 1 -16 A
VGS =10V; Tmb=25 °C; see Figure 1 -22 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 -88 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 -56 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 22 A
ISM peak source current pulsed; tp≤10 µs; Tmb =25°C - 88 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25 °C; ID =22A;
Vsup≤80 V; RGS =50 Ω; unclamped
-18 mJ
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure 4 -2.2 2.7 K/W
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 µA; VGS =0V; Tj= -55°C 73 --V= 250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold voltage ID =1 mA; VDS =VGS; Tj =175 °C;
see Figure 11; see Figure 12 --V =1 mA; VDS =VGS; Tj =-55 °C;
see Figure 11; see Figure 12
--4.6 V =1 mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 12
234V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C --1 µA
VDS =80V; VGS =0V; Tj= 125°C - - 15 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =10 A; Tj =100 °C;
see Figure 13
--74 mΩ
VGS =10V; ID =10 A; Tj =25°C [1] - 3746mΩ internal gate resistance (AC) f=1 MHz - 2 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0 A; VDS =0 V; VGS=10V -9 -nC =25 A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-11 -nC
QGS gate-source charge - 3.8 - nC
QGS(th) pre-threshold gate-source
charge =25 A; VDS =40V; VGS =10V;
see Figure 14
-1.9 -nC
QGS(th-pl) post-threshold gate-source
charge
-1.9 -nC
QGD gate-drain charge ID =25 A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-2.3 -nC
VGS(pl) gate-source plateau voltage VDS=40V -5.2 -V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25 °C; see Figure 17 633 - pF
Coss output capacitance - 100 - pF
Crss reverse transfer capacitance - 50 - pF
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-9.2 -ns rise time - 1 - ns
td(off) turn-off delay time - 16 - ns fall time - 2.4 - ns
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET[1] Measured 3 mm from package.
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; =25 °C;
see Figure 16 0.86 1.2 V
trr reverse recovery time IS =50A; dIS/dt= 100 A/µs;
VGS =0V; VDS =40V
-32 -ns recovered charge - 28 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
