PSMN030-150P ,N-channel TrenchMOS SiliconMAX standard level FET
PSMN030-150P ,N-channel TrenchMOS SiliconMAX standard level FETGeneral descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FE ..
PSMN030-150P ,N-channel TrenchMOS SiliconMAX standard level FET
PSMN030-150P ,N-channel TrenchMOS SiliconMAX standard level FETApplications DC-to-DC converters Switched-mode power supplies1.4 Quick reference data Table 1. Qu ..
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PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Higher operating power due to low
thermal resistance Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications DC-to-DC converters Switched-mode power supplies
1.4 Quick reference data
PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 16 December 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --150 V drain current Tmb=25°C --55.5 A
Ptot total power dissipation - - 250 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25°C 2430mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =55.5A;
VDS =120 V; Tj =25°C 3850nC
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET Pinning information Ordering information
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to drain
Table 3. Ordering informationPSMN030-150P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 150 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ - 150 V
VGS gate-source voltage -20 20 V drain current Tmb= 100°C - 39 A
Tmb=25°C - 55.5 A
IDM peak drain current pulsed; Tmb=25°C - 222 A
Ptot total power dissipation Tmb=25°C - 250 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb=25°C - 55.5 A
ISM peak source current pulsed; Tmb=25°C - 222 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =35A;
Vsup≤50 V; unclamped; tp= 100 µs;
RGS =50Ω 300 mJ
IAS non-repetitive avalanche current Vsup≤50 V; VGS =10V; Tj(init) =25°C;
RGS =50 Ω; unclamped
-35 A
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
--0.6 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage =0.25mA; VGS =0V; Tj= -55°C 133 - - V =0.25mA; VGS =0V; Tj=25°C 150 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= -55°C --6 V =1mA; VDS =VGS; Tj=25°C 234V =1mA; VDS =VGS; Tj= 175°C 1 - - V
IDSS drain leakage current VDS =150 V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =150 V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-10 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175°C - - 81 mΩ
VGS =10V; ID =25A; Tj=25°C - 24 30 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =55.5A; VDS =120V;
VGS =10V; Tj =25°C
-98 - nC
QGS gate-source charge - 16 - nC
QGD gate-drain charge - 38 50 nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C 3680 - pF
Coss output capacitance - 470 - pF
Crss reverse transfer capacitance - 220 - pF
td(on) turn-on delay time VDS =75V; RL =1.5 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C
-18 - ns rise time - 71 - ns
td(off) turn-off delay time - 97 - ns fall time - 76 - ns internal drain inductance measured from tab to centre of die; =25°C
-3.5 -nH
measured from drain lead to centre of
die (SOT78 package only); =25°C
-4.5 -nH internal source inductance measured from source lead to source
bond pad; Tj =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0 V; Tj=25°C - 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =0V; VDS =30V; Tj =25°C 109 - ns recovered charge - 610 - nC
NXP Semiconductors PSMN030-150P
N-channel TrenchMOS SiliconMAX standard level FET
