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PSMN017-80PS
N-channel 80 V 17 m鈩?standard level MOSFET in TO220
Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Rev. 3 — 27 September 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25°C; VGS =10V; see Figure 1 --50 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --103 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =10A; = 100 °C; see Figure 12
-15.2 29 mΩ
VGS =10V; ID =10A; =25°C; see Figure 13
-13.7 17 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =40V; see Figure 14;
see Figure 15 -nC
QG(tot) total gate charge - 26 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; =50 A; Vsup≤80V; RGS =50 Ω; unclamped
--55 mJ
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220 Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN017-80PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10 V; Tmb= 100 °C; see Figure 1 -35 A
VGS =10 V; Tmb =25°C; see Figure 1 -50 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 200 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 103 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 50 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 200 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10 V; Tj(init) =25 °C; ID =50A;
Vsup≤80 V; RGS =50 Ω; unclamped
-55 mJ
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220 Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure 4 -1 1.5 K/W
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220 CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source breakdown
voltage =250 µA; VGS =0V; Tj= -55°C 73 - - V =250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10; see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10; see Figure 11
--4.8 V =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C - 0.3 2 µA
VDS =80V; VGS =0V; Tj= 125°C --50 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =10A; Tj= 175 °C;
see Figure 12 32.64 40.8 mΩ
VGS =10V; ID =10A; Tj= 100 °C;
see Figure 12 15.2 29 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13 13.7 17 mΩ internal gate resistance (AC)f=1 MHz - 1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 22 - nC =25A; VDS =40 V; VGS=10 V; see
Figure 14; see Figure 15
-26 -nC
QGS gate-source charge - 7.7 - nC
QGS(th) pre-threshold gate-source
charge
-4.6 -nC
QGS(th-pl) post-threshold gate-source
charge -nC
QGD gate-drain charge - 6 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =40V; see Figure 15 -4.7 -V
Ciss input capacitance VDS =40V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 1573 - pF
Coss output capacitance - 154 - pF
Crss reverse transfer capacitance - 88 - pF
td(on) turn-on delay time VDS =40V; RL =1.6 Ω; VGS =10V;
RG(ext) =4.7Ω
-14 -ns rise time - 12 - ns
td(off) turn-off delay time - 27 - ns fall time -8 -ns
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Source-drain diodeVSD source-drain voltage IS =10A; VGS =0 V; Tj =25°C;
see Figure 17 0.79 1.2 V
trr reverse recovery time IS =40A; dIS/dt= 100 A/µs;
VGS =0V; VDS =40V
-41 -ns recovered charge - 55 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
