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PSMN016-100YS |PSMN016100YSNXPN/a1500avaiN-channel 100 V 16.3 m鈩?standard level MOSFET in LFPAK


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PSMN016-100YS
N-channel 100 V 16.3 m鈩?standard level MOSFET in LFPAK
Product profile1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits Advanced TrenchMOS provides low
RDSon and low gate charge High efficiency gains in switching
power converters Improved mechanical and thermal
characteristics LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Rev. 4 — 27 September 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --100 V drain current Tmb =25°C; VGS =10V;
see Figure 1
--51 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --117 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state
resistance
VGS =10 V; ID =15A; = 100 °C; see Figure 12
--29.3 mΩ
VGS =10 V; ID =15A; =25°C; see Figure 13 12.7 16.3 mΩ
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Pinning information Ordering information
Dynamic characteristics
QGD gate-drain charge VGS =10 V; ID =30A;
VDS =50V; see Figure 14;
see Figure 15
-16 -nC
QG(tot) total gate charge - 54 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10 V; Tj(init) =25 °C; =51A; Vsup≤ 100V;
unclamped; RGS =50Ω
--87 mJ
Table 1. Quick reference data …continued
Table 2. Pinning information
Table 3. Ordering information
PSMN016-100YS LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -36 A
VGS =10V; Tmb =25°C; see Figure 1 -51 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25 °C; see Figure 3 - 204 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -117 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 51 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 204 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =51A;
Vsup≤ 100 V; unclamped; RGS =50Ω
-87 mJ
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.54 1.28 K/W
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V; Tj= -55°C 90 - - V= 0.25 mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 10
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.7 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 125°C - - 100 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.04 2 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15 A; Tj= 100 °C;
see Figure 12 - 29.3 mΩ
VGS =10V; ID =15 A; Tj= 175 °C;
see Figure 12 28.7 45.6 mΩ
VGS =10V; ID =15 A; Tj =25°C;
see Figure 13 12.7 16.3 mΩ internal gate resistance (AC) f=1 MHz - 0.6 1.5 Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 42 - nC =30 A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-54 -nC
QGS gate-source charge - 11 - nC
QGS(th) pre-threshold gate-source
charge =30 A; VDS =50V; VGS =10V;
see Figure 14 -nC
QGS(th-pl) post-threshold gate-source
charge
-3.2 -nC
QGD gate-drain charge ID =30 A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-16 -nC
VGS(pl) gate-source plateau voltage VDS =50V; see Figure 14;
see Figure 15
-4.2 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 2744 - pF
Coss output capacitance - 205 - pF
Crss reverse transfer capacitance - 135 - pF
td(on) turn-on delay time VDS =50V; RL =1.7 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C
-19 -ns rise time - 24 - ns
td(off) turn-off delay time - 47 - ns fall time - 21 - ns
NXP Semiconductors PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0 V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =10A; dIS/dt= 100 A/µs;
VGS =0V; VDS =50V
-56 -ns recovered charge - 131 - nC
Table 6. Characteristics …continued
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