PL87X288BN ,15 ns, (32 x 8) 256-bit TTL logic PROMBlock Diagram
256 BIT 0R ARRAY
PROVIDING
ALL 32 PRODUCT TERMS
ENABLE
BUFFER
TL/D/6747-1 ..
PLA110L , Single Pole OptoMOS Relays
PLA110L , Single Pole OptoMOS Relays
PLA110LSTR , Single Pole OptoMOS Relays
PLA140 , Single Pole OptoMOS Relay
PLA140 , Single Pole OptoMOS Relay
PS231S , 5-Channel Secondary Monitoring IC
PS236 , 3-Channel Secondary Monitoring IC With an Additional OCP Channel
PS2403-1 ,MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPEELECTRICAL CHARACTERISTICS (Ta = 25 ''tt)
CHARACTERISTIC
Forward Voltage
Reverse Current
Junc ..
PS2403-2 ,MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPEELECTRICAL CHARACTERISTICS (Ta = 25 ''tt)
CHARACTERISTIC
Forward Voltage
Reverse Current
Junc ..
PS2403-3 ,MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPEELECTRICAL CHARACTERISTICS (Ta = 25 ''tt)
CHARACTERISTIC
Forward Voltage
Reverse Current
Junc ..
PS2403-4 ,MULTI PHOTO COUPLER HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPEAPPLICATIONS
. Small package size Interface circuit for various instrumentations, control equipmen ..
PL87X288BN
15 ns, (32 x 8) 256-bit TTL logic PROM
PL87X2888
National
[ Semiconductor
PL87X288B
(32 It 8) 256-Bit TTL Logic PROMS
General Description Features
These Schottky programmable logic devices are organized B Advanced titanium-tungsten (Ti-W) fuses
in the popular 32 words by 8-bit configuration. An enable rt Schottky-clamped for high speed
input is provided to control the output states. When the de- Address access-Is ns max
vice is enabled, the outputs represent the contents of the Enable access-lil ns max
selected word. When disabled, the 8 outputs go to the OFF Enable mcovery--12 ns max
or high impedance state. The memories are available in the u PNP inputs for reduced input loading
TRI-STATE' version only. a All DC and AC parameters guaranteed over
PROMs are shipped from the factory with lows in all loca- temperature
tions. A high may be programmed into any selected location I: Low voltage TRLSAFETM programming
by following the programming instructions. I: > 2000V input protection for electrostatic discharge
II TRI-STATE outputs
Block Diagram
M-- 32
A3- TERM 256 arr 0R ARRAY
M-- nxm =t PROVIDING
A1_ AND ALL 32 PRODUCT TERMS
AO- .. .
I I l l l I I
- ENABLE " - - __ - - -
tr-- BUFFER r BUF BUF BUF BUF BUF BUF BUF BUF
I I l l l l I I
O7 06 05 04 03 02 Qt 00
TLlD/6747-1
Pln Names
AO-A4 Addresses
G Output Enable
GND Ground
00-07 Outputs
Vcc Power Supply
Connection Diagrams
Dual-ln-Line Package
M-- 1 16 -a
ol- 2 15 .-t5
tlt- 3 14 Th4
03- 4 13 -A3
04- 5 12 -A2
A5- 6 11 -A1
(N-. 7 10 -ho
GND- 8 ' -07
TL/D/6747-2
Top View
Order Number PL87X2888J or PL87X288BN
See NS Package Number J16A or N16A
Ordering Information
Plastic Leaded Chlp Carrier (PLCC)
5 8 2 >810
l l l l l
3 2 1 20 19
t12-" 4 18 '-A4
03- 5 17 -A3
NC- 6 16 -NC
04- 7 15 -A2
05- 8 14 "-A1
9 10 11 12 13
l I Fl I
8 E 'd ty' 2
TopVIew
Order Number PL87X288BV
See NS Package Number V20A
Commercial Temperature Range
0°C to + 70°C
Parameter/Order Number
Max Access Time (n8)
PL87X288BN 1 5
PL87X288BJ 1 5
PL87X288BV 1 5
TL/D/6747-9
8883X£81d
PL87X288B
Absolute Maximum Ratings
Operating Conditions
ll Mllltary/Aerospace ttttsetter' devlces are required, Min Max Units
please contact the National Setttlttttttthttttor Sales Supply Voltage (Vcc)
Omtat/Ditttrlttutttra for availability and specifications. PL87X2888 4.75 5.25 V
Supply Voltage (Note 2) -0.5 to + 7.0V Ambient Temperature (T A)
Input Voltage (Note 2) --1,2 to + 5.5V PL87X288B + 70 'C
Output Voltage (Note 2) -0.6 to + 5.5V Logical "ty' Input Voltage 0 0.8 V
Storage Temperature -65 to + 150°C Logical "1" Input Voltage 2.0 5.5 V
Lead Temperature (Soldering, 10 seconds) 30tPC
ESD Rating > 2000V
DC Electrical Characteristics (Note a)
Symbol Parameter Conditions PL87X2888 Unlts
Mln Typ Max
IIL Input Load Current Vcc = Max, VIN = 0.4V -80 -250 HA
lm Input Leakage Current Vcc = Max, VIN = 2.7V 25 pA
Vcc = Max, VIN = 5.5V 1.0 mA
VOL Low Level Output Voltage Vcc = Min, IOL = 24 mA 0.35 0.50 V
" Low Level Input Voltage (Note 7) 0.80 V
VIH High Level Input Voltage (Note 7) 2.0 V
Vc lnputClamp Voltage Vcc == Min, IN = -18 mA -0.8 - 1.5 V
C; InputCapacitance Vcc = 5.0V,V.N = 2.0V 4 0 F
TA = 290.1 MHz . p
Co Output Capacitance Vcc = 5.0V. Vo = 2.0V 6 0 F
TA = 290.1 MHz, Outputs Off . " p
lcc Power Supply Current Vcc = Max, lnputGrounded 110 140 m A
All Outputs Open
Ios Short Circuit V0 = OV, Vcc = Max _ -
Output Current (Note 4) 30 130 mA
loz Output Leakage Vcc = Max, Vo = 0.4V to 2.4V 100 A
(T RI-STATE) Chip Disabled - 100 "
VOH Output Voltage High 'OH = -3.2 mA 2.4 3.2 V
Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at
these values.
Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions.
Note & These limits apply over the entire operating range unless stated otherwise. All typical values are for Vcc = 5.0V and TA = 25'0.
Note 4: During kys measurement, onty one output at a time should be grounded. Permanent damage may otherwise result.
Note s.. CL " 50 pF,
Note 6: A = 5 pF.
Note r.. These are absolute voltages with respect to the ground pin on the device and includes all overshoots due to system and/or tester noise. Do not attempt to
test these values without suitable equipment.
AC Electrical Characteristics with standard load and operating conditions
Symbol Parameter $535: PLtmt288B Units
Min Typ Max
tAA Address Access Time (Note 5) TAVQV 10 15 ns
tEA Enable Access Time (Note 5) TEVQV 8 12 ns
tER Enable Recovery Time (Note 6) TEXQX 8 12 ns
12x Output Enable Time (Note 5) TEVQX 8 12 ns
txz Output Disable Time (Note 6) TEXQZ 8 12 ns
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
fusable links for testing the programmability of each chip.
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product. A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels. These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates. All test circuits are available at both water and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow.
RELIABILITY
As with all National products, the Ti-W PROMs are subject-
ed to an on-going reliability evaluation by the Reliability As-
surance Department. These evaluations employ accelerate
ed life tests, including dynamic high-temperature operating
life, temperature-humidity life, temperature cycling, and ther-
mal shock. To date, nearly 7.4 million Schottky Ti-W PROM
device hours have been logged, with samples in Epoxy B
molded DIP (N-package), PLCC (V-package) and CERDIP
(J-package). Device performance in all package configura-
tions is excellent.
TITANIUM-TUNGSTEN FUSES
National's Programmable Read-Only Memories (PROMs)
feature titanium-tungsten (Ti-W) fuse links designed to pro-
gram efficiently with only 10.5V applied. The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process, of which the titanium-
tungsten metalization is an integral part, and the use of an
on-chip programming circuit.
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links. At 10.5V,
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies. Care is
taken, however, to minimize voltage drops across the die
and to reduce parasitics. The device is designed to ensure
that worst-case fuse operating current is low enOUgh for
reliable long-term operation. The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links. The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of Vcc and temperature.
88BZXL8'Id
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
National Semiconductor was acquired by Texas Instruments.
corp/docs/irwestor_relations/Pr_09_23_201 1_national_semiconductor.html
This file is the datasheet for the following electronic components:
PL87X288BJ - product/pl87x288bj?HQS=T|-nu|I-nulI-dscatalog-df-pf-nulI-wwe
PL87X288BN - product/pl87x288bn?HQS=T|-nu|I-null-dscataIog-df-pf-null-wwe
PL87X288BV - product/pl87x288bv?HQS=T|-nu|I-null-dscatalog-df-pf-nuII-wwe
