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PKC136-PKC-136
PEAK CLAMP
PKC-136August 2001- Ed:2A
PEAK CLAMP Accurate voltage clamping regardless load Reduced current loop Reduced EMI emission High integration Fast assembly Reduced lossesin standby mode
BENEFITS Protectionof the Mosfetin flyback power supply TRANSIL™ and blocking diode ina single
package
FEATURES
ABSOLUTE MAXIMUM RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICSApplication Specific Discretes
ASD™
BASIC CONNECTION
PKC-136
ELECTRICAL CHARACTERISTICS DIODE(Tj= 25°C unless otherwise specified)
ELECTRICAL CHARACTERISTICS TRANSIL repetitive mode and for low current rating, use the equation (1) and (2)to calculate the breakdown
voltage VBRof the transil versus the operating junction temperature and use the equation (3)to calculate
the clamping voltage versus the transil current Ipp and the temperature.
ΔVTT V CBR j BR=− °α () ( )25 25 (1) V C VBRj BR BR() ( )=° +25 Δ (2) T V T Rd IppCLj BRj() () .=+ (3)
CALCULATION OF THE CLAMPING VOLTAGE:
CAPACITANCE
PKC-136
1.E-01
1.E+00
1.E+01
1.E+02
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Pp(kW)
Fig.1: Peak pulse power versus exponential pulse
duration.
110 25 50 75 100 125 150 175
Fig.2: Relative variationof peak pulse power
versus initial junction temperature.
Note1: Device mountedona epoxy FR4 boardof 35μm thickness
Lead Length: 10mm
Pad diameter: 4mm
Track width: 1mm
Track length: 25mm
The Rth(j-a) canbe reducedby replacing the Cu trackby plan:
S(Cu)= 1.5cm2 /lead Rth(j-a)= 65°C/W
S(Cu)= 3.5cm2 /lead Rth(j-a)= 60°C/W
THERMAL RESISTANCES
1.8 25 50 75 100 125 150
P(W)
Fig.3: Average power dissipation versus ambient
temperature.
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a) (°C/W)
Fig.4: Variationof thermal impedance junctionto
ambient versus pulse duration (printed circuit
board epoxy FR4)
PKC-136
0123456789 10
Rth(j-a)
Fig.5: Thermal resistance junctionto ambient
versus copper surface under each lead.
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+002030405060708090 100110120130140150
IR(μA)
Fig. 6-1: Reverse leakage current versus reverse
voltage applied (typical values,for Transil).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02 50 100150200250300350400450500550600650700
IR(μA)
Fig. 6-2: Reverse leakage current versus reverse
voltage applied (typical values,for diode).
50 100 150 200 250 300 350 400 450 500 (V)FP
Fig. 7: Transient peak forward voltage versus
dIF/dt (90% confidence).
160 165 170 175 180 185 190 195 200 205 210 215 220
Ipp(A)
Fig. 8: Clamping voltage versus peak pulse
current (maximum values).
100 10 100 1000
C(pF)
Fig. 9: Junction capacitance versus reverse
voltage appliedon clamping characteristic (typical
values).
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