PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
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PRA ,High Precision Resistor Arrays, Very Short Deliveries Even on Special Orders, High Stability Passivated Nichrome Resistive Layer, Ratio Tolerance to 0.01%, Pre-Tinned or Gold Terminations over Nickel Barrier FEATURESResistance values can be different on a given networkNoise : ≤ - 35 dB(R max. /R min. as h ..
PIMN31
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
Product profile1.1 General description500 mA, 50 V NPN/NPN double Resistor-Equipped T ransistor (RET) in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified
1.3 Applications Digital application in automotive and industrial segments Switching loads
1.4 Quick reference data
PIMN31
500 mA, 50 V NPN/NPN double resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 01 — 19 June 2007 Product data sheet
Table 1. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 50 V output current - - 500 mA bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
NXP Semiconductors PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ Pinning information Ordering information Marking Limiting values
Table 2. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 65 4 23
sym063
Table 3. Ordering informationPIMN31 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPIMN31 4E
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V input voltage
positive - +12 V
negative - −5V output current - 500 mA
Ptot total power dissipation Tamb≤25°C [1]- 290 mW
NXP Semiconductors PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Per devicePtot total power dissipation Tamb≤25°C [1]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 431 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 105 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 298 K/W
NXP Semiconductors PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ Characteristics
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =50V; IB=0A - - 0.5 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 0.72 mA
hFE DC current gain VCE =5V; IC =50mA 70 - -
VCEsat collector-emitter
saturation voltage=50 mA; IB= 2.5 mA - - 0.3 V
VI(off) off-state input voltage VCE =5V; IC= 100μA 0.3 0.6 1 V
VI(on) on-state input voltage VCE= 0.3 V; IC=20 mA 0.4 0.8 1.4 V bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11 collector capacitance VCB =10V;IE =ie =0A;
f=1MHz -pF
NXP Semiconductors PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
NXP Semiconductors PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 (Stress qualificationfor discrete semiconductors) andis suitablefor
use in automotive critical applications.
