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IRGB4B60K-IRGS4B60K
600V Low VCEon Copack IGBT in a TO-220 package
PD - 94633A
International IRGB4B60K
TOR Rectifier IRGS4B60K
INSULATED GATE BIPOLAR TRANSISTOR IRGSL4B60K
Features
. Low VCE (on) Non Punch Through IGBT Technology. C VCES = 600V
. 10ps Short Circuit Capability.
. Square RBSOA. lc = 6.8A, Tc=100oC
. Positive VCE (on) Temperature Coefficient.
. Maximum Junction Temperature rated at 175°C. G tsc > 10ps, TJ=150°C
Benefits n-channel VCE(on) typ. = 2.1V
. Benchmark Efficiency for Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Excellent Current Sharing in Parallel Operation.
TO-22O D2Pak TO-262
IRGB4B60K IRGS4B60K IRGSL4B60K
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 12
Ic @ TC = 100°C Continuous Collector Current 6.8 A
Ics, Pulse Collector Current (Ref.Fig.C.T.5) 24
ILM Clamped Inductive Load current C) 24
VGE Gate-to-Emitter Voltage t20 V
PD @ Tc = 25°C Maximum Power Dissipation 63 W
Pro @ To = 100°C Maximum Power Dissipation 31
T: Operating Junction and -55to +175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal I Mechanical Characteristics
Parameter Min. Typ. Max. Units
ROJC Junction-to-Case- IGBT - - 2.4 "C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
ROJA Junction-to-Ambient - - 62
RNA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
8/4/03
IRGB/S/SL4B60K
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions RetFig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V I/ss = 0V, lc = 500PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.28 - V/°C VGE = 0V, k: = 1mA (25°C-150°C)
- 2.1 2.5 Ic = 4.0A, VGE = 15V, T1 = 25°C 5,6,7
VCE(on) Collector-to-Emitter Voltage - 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C 9,10,11
- 2.6 2.8 Ic = 4.0A, VGE =15V,TJ = 175°C
VGEW Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, lc = 250pA 9,10,11
AVGE(lh)/ATJ Threshold Voltage temp. coefficient - -8.1 - mV/°C I/cs = I/ss, lc = 1mA (25°C-150°C) 12
gfe Forward Transconductance - 1.7 - S I/cs = 50V, lc = 4.0A, PW = 80ps
- 1.0 150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current - 54 300 pA VGE = 0V, VCE = 600V, T J = 150°C
- 300 800 VGE = 0V, VCE = 600V, T, = 175°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions RetFig.
Qg Total Gate Charge (turn-on) - 12 - Ic = 4.0A 23
Qge Gate-to-Emi) Charge (turn-on) - 1.7 - nC Vcc = 400V CT1
Qgc Gate-to-Collector Charge (turn-on) - 6.5 - VGE = 15V
Eon Turn-On Switching Loss - 73 80 IC = 4.0A, Vcc = 400V CT4
Es, Turn-Off Switching Loss - 47 53 pJ VGE = 15V, Rs = 1009, L = 2.5mH
Em Total Switching Loss - 120 130 T J = 25''C ©
td(on) Turn-On delay time - 22 28 lc = 4.0A, Vcc = 400V
t, Rise time - 18 23 ns VGE = 15V, Rs = 1009, L = 2.5mH CT4
tdwm Turn-Off delay time - 100 110 T: = 25''C
t, Fall time - 66 80
Eon Turn-On Switching Loss - 130 150 lc = 4.0A, Vcc = 400V CT4
Es, Turn-Off Switching Loss - 83 140 pJ VGE = 15V, Rs = 1009, L = 2.5mH 13,15
Etot Total Switching Loss - 220 280 T: = 150°C © WF1,WF2
tam") Turn-On delay time - 22 27 lc = 4.0A, Vcc = 400V 14,16
t, Rise time - 18 22 ns VGE = 15V, Rs = 1009, L = 2.5mH CT4
td(ott) Turn-Off delay time - 120 130 T: = 150°C INFI
t, Fall time - 79 89 WF2
Cles Input Capacitance - 190 - VGE = OV
Coes Output Capacitance - 25 - pF Vcc = 30V 22
Cres Reverse Transfer Capacitance - 6.2 - f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE T: = 150°C, lc = 24A, Vp = 600V 4
Vcc=500V,VGE = +15V to OV,RG = 1009 CT2
SCSOA Short Circuit Safe Operating Area 10 - - us T1 = 150°C, Vp = 600V, Rs = 1009 CT3
Vcc=360V,VGE = +15V to 0V WF3
Note CO to (3 are on page 16
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