IC Phoenix
 
Home ›  FF7 > FDG6301N_F085,Dual N-Channel Digital FET
FDG6301N_F085 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDG6301N_F085FAIN/a9000avaiDual N-Channel Digital FET


FDG6301N_F085 ,Dual N-Channel Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6302 ,Dual P-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDG6302P ,Dual P-Channel, Digital FETFeatures-25 V, -0.14 A continuous, -0.4 A peak.These dual P-Channel logic level enhancement mode ..
FDG6303 ,Dual N-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6303N ,Dual N-Channel, Digital FETJuly 1999 FDG6303N Dual N-Channel, Digital FET
FDG6303N_NL ,Dual N-Channel Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FP1189 , High Performance ½-Watt HFET(Heterostructure FET)
FP11-89 , High Performance ½-Watt HFET(Heterostructure FET)
FP1308R1-R32-R , High Current, High Frequency, Power Inductors
FP15R12KT3 , IGBT-Wechselrichter / IGBT-inverter
FP15R12W1T4 , EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FP15R12YT3 , IGBT-modules


FDG6301N_F085
Dual N-Channel Digital FET
FDG6301N_F085 Dual N-Channel, Digital FET March 2009 FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode R = 4 W @ V = 4.5 V, field effect transistors are produced using Fairchild's DS(ON) GS proprietary, high cell density, DMOS technology. This R = 5 W @ V = 2.7 V. DS(ON) GS very high density process is especially tailored to Very low level gate drive requirements allowing direct minimize on-state resistance. This device has been operation in 3 V circuits (V < 1.5 V). designed especially for low voltage applications as a GS(th) replacement for bipolar digital transistors and small Gate-Source Zener for ESD ruggedness signal MOSFETs. (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. Qualified to AEC Q101 RoHS Compliant TM TM SOT-23 SuperSOT -6 SO-8 SC70-6 SuperSOT -8 SOT-223 S2 1 or 4 * G2 6 or 3 D1 2 or 5 5 or 2 D2 G1 S1 4 or 1 * 3 or 6 SC70-6 *The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter FDG6301N_F085 Units V Drain-Source Voltage 25 V DSS V Gate-Source Voltage 8 V GSS I Drain/Output Current - Continuous 0.22 A D - Pulsed 0.65 P Maximum Power Dissipation (Note 1) 0.3 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model(100 pF / 1500 W) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 415 °C/W qJA ©2009 1 FDG6301N_F085 Rev. A .01
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED